Publication detail

Obtaining of epitaxial layers of silicon carbide and aluminum nitride solid solution by sublimation.

BILALOV, B. KARDASHOVA, G. EUBOV, S. SOBOLA, D. GADJEV, A.

Original Title

Obtaining of epitaxial layers of silicon carbide and aluminum nitride solid solution by sublimation.

English Title

Obtaining of epitaxial layers of silicon carbide and aluminum nitride solid solution by sublimation.

Type

journal article - other

Language

Russian

Original Abstract

The purpose of the study is obtaining of epylayers of solid solutions on the basis of silicon carbide and aluminum nitride (SiC)1-x(AlN)x on the silicon carbide substrates by sublimation and investigation of structure and composition of the samples.

English abstract

The purpose of the study is obtaining of epylayers of solid solutions on the basis of silicon carbide and aluminum nitride (SiC)1-x(AlN)x on the silicon carbide substrates by sublimation and investigation of structure and composition of the samples.

Keywords

wide-band-gap semiconductor, atomic force microscopy, scanning electron microscopy, solid solution

Key words in English

wide-band-gap semiconductor, atomic force microscopy, scanning electron microscopy, solid solution

Authors

BILALOV, B.; KARDASHOVA, G.; EUBOV, S.; SOBOLA, D.; GADJEV, A.

Released

30. 4. 2010

Publisher

PI FS 77-39604

Location

Krasnoyarsk

ISBN

2072-0831

Periodical

In the World of Scientific Discoveries

Year of study

2010

Number

4.510

State

Russian Federation

Pages from

24

Pages to

25

Pages count

2

URL

http://www.nkras.ru

BibTex

@article{BUT76514,
  author="Bilal {Bilalov} and Gulnara {Kardashova} and Samur {Eubov} and Dinara {Sobola} and Asadula {Gadjev}",
  title="Obtaining of epitaxial layers of silicon carbide and aluminum nitride solid solution by sublimation.",
  journal="In the World of Scientific Discoveries",
  year="2010",
  volume="2010",
  number="4.510",
  pages="24--25",
  issn="2072-0831",
  url="http://www.nkras.ru"
}