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Original title in Czech: Fyzikální elektronika a nanotechnologieFEKTAbbreviation: PP-FENAcad. year: 2009/2010
Programme: Electrical Engineering and Communication
Length of Study:
Profile
The objective of the study is to provide PhD education to MSc graduates in all partial fields and to create a cross-disciplinary overview of the present development, to develop theoretical foundations in the selected research area, to master the methods of scientific, to develop their creative abilities and to use them for the solution of research problems. This all should lead to a dissertation thesis, which will provide an original a significant contribution to the research status in the field of interest.
Key learning outcomes
Graduates of this program will acquire cross-disciplinary knowledge of and experience in technical and physical subjects on a high-quality theoretical level. Graduates are for their later independent research and development work equipped with the knowledge and experience from, in particular, physics of semiconductors, quantum electronics and mathematical modeling and will be able to independently solve problems associated with nanotechnologies. Potential job careers: research worker in basic or applied research and in the introduction, implementation and application of new prospective and economically beneficial procedures and processes in the field of electronics, electrical engineering, non-destructive testing and reliability and material analysis.
Occupational profiles of graduates with examples
Graduates of this program will acquire cross-disciplinary knowledge of and experience in technical and physical subjects on a high-quality theoretical level. Graduates are for their later independent research and development work equipped with the knowledge and experience from, in particular, physics of semiconductors, quantum electronics and mathematical modeling and will be able to independently solve problems associated with nanotechnologies. Potential job careers: research worker in basic or applied research and in the introduction, implementation and application of new prospective and economically beneficial procedures and processes in the field of electronics, electrical engineering, non-destructive testing and reliability and material analysis
Guarantor
prof. RNDr. Pavel Tománek, CSc.
Issued topics of Doctoral Study Program
The present level of environmental protection as well as current efforts to replace crude oil products by agricultural products exert a strong pressure upon insulating oils used in electrical engineering. The main requirement is improved biodegradability while preserving the standard properties as high breakdown strength, high resistivity, low permittivity, long-term stability as well as low price. These requirements can be met by vegetable oils (e.g. line-seed or rapeseed oils), mostly methylesters or ethylesters, sometimes also triglycerides or their synthetically manufactured analoga. In some cases, a suitable substitute may also be motor and industrial oils. The subject of the study will be dielectric properties of vegetable oils intended for the use in power engineering. Studies should be focused to the impact of a particular chemical structure onto their electrical properties and to their applicability at low temperatures. The work on this topic will require experimental work in sample preparation and design and theoretical studies and measurement of electrical properties of analyzed material systems. What is available: measurement equipment for the frequency range 10^(-3) - 10^9 Hz and the helium cryostat for the temperature range 10 - 500 K.
Tutor: Liedermann Karel, doc. Ing., CSc.
Quartz Crystal Microbalance (QCM) is used for the determination of substance deposited onto the crystal. The mass sensitivity depends on 1/f and GR noise. The aim of this research is the optimalization of the signal/noise ratio.
Tutor: Šikula Josef, prof. Ing. RNDr., DrSc.
The objective of the research work will be the investigation of electrical properties of polydimetylsiloxan - SiO2 systems and, in particular thin layers made from them. These systems exhibit a very low value of relative permittivity (dielectric constant, < 3,5) and thus they are promising materials for dielectric films for organic this film transistors (OTFT). The research of this topic will require experimental works related to the manufactures of samples, theoretical studies of the behaviour of polydimethylsiloxan - SiO2 systems in electric fields on a microscopic level as well as the measurement of electrical poperties of manufactured samples. Measurements will take place in the laboratory of dielectric relaxation spectroscopy at the Department of Physics, FEEC, BUT Brno, with the available frequency interval 10E-3 - 10E+9 Hz. Also available is a helium cryostat for temperature range 10 - 500 K.
The aim of work is problems using nanoparticles for soldering pastes, problems how to prepare nanoparticles for LF alloys (SAC). Cooperation with CSAV and industry.
Tutor: Šandera Josef, doc. Ing., Ph.D.
The goal will be a study of noise originated during electric current conducting in organic polymers and in electronic devices based on them. Found noise sources will be described and a model of their origin will be proposed. Obtained results will be used for finding of the non-destructive testing methodology.
Tutor: Koktavý Pavel, prof. Ing., CSc. Ph.D.
Nondestructive diagnostics and local characterization of optoelectronic devices. Study of characteristics of opto-electronic devices in the near-field.
Tutor: Tománek Pavel, prof. RNDr., CSc.
The proposed project is dealing with up-to-date research topics of fluctuation phenomena in Schottky and cold-field emission cathodes. Methodology consists in experimental study of measurable quantities, as the noise voltage or current and theirs spectral density dependence on temperature, light illumination and electric field intensity. Vakuum apparatus and technology of the preparation cathodes is ready to use.
Tutor: Grmela Lubomír, prof. Ing., CSc.
New nondestructive testing method of the quality and reliability of electrical resistances based on interaction of ultrasonic vibration and electric charge transport in conducting layers
Tutor: Sedláková Vlasta, doc. Ing., Ph.D.
The noise spectroscopy of the radiation sensors is included in non-destructive degradation processes in semiconductor structures and devices. Methodes in time and frequency domain is one of the promising methods to provide characterization of semiconductor materials and devices depended on iillumination and electric field intensity, energy of the traps. The sensitivity of excess electrical noise to this kind of defects is the main reason of investigation and use of noise as s diagnostic and prediction tool in reliability physics for the semiconductor devices lifetime assessments.
The subject of the study and research will be the determination of the true noise-free discharge current from a capacitor containing a real dielectric, and the subsequent Fourier transformation with the objective to find the frequency dependence of the complex permittivity (its imaginary part being often referred to as dielectric spectrum). The focus of the research will be on the processing of a large amount of experimental samples of a noisy discharge current, on the discrimination of noise, its definition and filtration. This part of the work will continue with the Fourier transformation of the denoised discharge current. This part will necessitate a study of the discreet Fourier transformation as well as a selection of a method that will be most suitable for the case of a non-periodical shape of the input function.
This research is to clarify the relation among the electronic noise, the charge carier relaxation time and the localised state energy levels in the gate insulating layers of MOSFETs and insulating layers of tantalum capacitors.
Cracks creation in mechanical loaded solids is accompanied by origin of electromagnetic (EME) and acoustic (AE) signals. These signals may be used for study of cracks formation evolution and for their characteristics finding. The goal will be a suggestion of methodology for measured EME and AE signals processing. Procedures for description of cracks parameters and cracks evolution based on these signals will be found. Results will be used for diagnostics of mechanically loaded solids.
Materials exhibiting high permittivity (dielectric constant, k) are needed for new applications, particularly in integrated circuits (ICs) using the 32 nm technology and in capacitors. In capacitors, high-k dielectrics will be used in order to attain higher energy densities in capacitors and thus to reduce the size of capacitors themselves. In ICs manufacturing, the present drive toward smaller dimensions results in the thinning of insulating layers, accompanied by an unwanted increase of leakage currents. In order to prevent this effect, higher gate thicknesses are desired which, however, because of the necessity to keep the capacitance constant, should exhibit higher dielectric constant than the pure SiO2. Materials searched for should be used within the current silicon technologies and, therefore, they must be able to sustain all manufacturing steps without being damaged. Materials studied include ZrO2, HfO2, Al2O3, Y2O3, La2O3, Ta2O3 etc. Moreover, all materials considered must be thermodynamically stable on silicon for a long time. The work on this topic will require experimental work in sample preparation and design, studies of the origin of high-k effects and the measurement of electrical properties of material systems developed. What is available: measurement equipment for the frequency range 10^(-3) - 10^9 Hz and the helium cryostat for the temperature range 10 - 500 K.
Decreasing the dimensions in integrated circuits (currently 32 nm) brings about an increase of interconnect capacitance and thus the reduction of the signal propagation speed. The limiting factor for a further improvement of electronic device performance thus become not the properties of semiconductor devices themselves but rather interconnect delays and, hence, too high magnitudes of parasitic capacitances. One of the options for the reduction of interconnect capacitances is the reduction of the permittivity (dielectric constant, k) of thin-layer insulating layers (capacitance is directly proportional to permitivity). Two major routes are available: replacement of polar Si-O bonds with less polar Si-F or Si-C bonds or raising the porosity (intentional introduction of air voids). The newly developed low-k materials must, however, not limit the currently used silicon technologies and must be able to pass all manufacturing steps (temperatures up to about 1100°C). The work on this topic will require experimental work in sample preparation and design, studies of the theory of low-k dielectrics and the measurement of electrical properties of developed material systems. What is available: measurement equipment for the frequency range 10^(-3) - 10^9 Hz and the helium cryostat for the temperature range 10 - 500 K.
Study of structural and optical models of tissues with single and multiple scattering with ordered and randomly distributed scatterers.