Project detail

Novel Wide Bandgap Semiconductor Materials and Devices

Duration: 01.01.2015 — 31.12.2017

Funding resources

Technologická agentura ČR - Program na podporu aplikovaného výzkumu a experimentálního vývoje EPSILON (2015-2025)

- whole funder (2015-01-01 - 2017-12-31)

Mark

TH01011284

Default language

Czech

People responsible

Šikola Tomáš, prof. RNDr., CSc. - principal person responsible

Units

Fabrication and Characteris. of Nanostr.
- beneficiary (2014-06-30 - not assigned)

Results

MACH, J.; PROCHÁZKA, P.; BARTOŠÍK, M.; NEZVAL, D.; PIASTEK, J.; HULVA, J.; ŠVARC, V.; KONEČNÝ, M.; KORMOŠ, L.; ŠIKOLA, T. Electronic transport properties of graphene doped by gallium. NANOTECHNOLOGY, 2017, vol. 28, no. 41, p. 1-10. ISSN: 0957-4484.
Detail