This project was co-financed with state support of the CR Technological Agency as part of Programu na podporu aplikovaného výzkumu a experimentálního vývoje EPSILON (2015-2025)
www.tacr.cz
Research useful for society.

Project detail

Development of Novel Technologies for Trench Insulated Gate Bipolar Transistors (TIGBT) Manufacturing

Duration: 01.01.2015 — 31.12.2017

Funding resources

Technologická agentura ČR - Program na podporu aplikovaného výzkumu a experimentálního vývoje EPSILON (2015-2025)

- whole funder (2015-01-01 - 2017-12-31)

Mark

TH01010419

Default language

Czech

People responsible

Bábor Petr, doc. Ing., Ph.D. - principal person responsible

Units

Fabrication and Characteris. of Nanostr.
- beneficiary (2014-06-30 - not assigned)

Responsibility: Bábor Petr, doc. Ing., Ph.D.