Project detail

High-resolution EBIC studies of dislocations in AlN/Si films

Duration: 01.03.2020 — 28.02.2021

Funding resources

Brno University of Technology - Vnitřní projekty VUT

- whole funder (2020-01-01 - 2021-12-31)

On the project

The objective of this project is to characterize the microstructural changes in AlN/Si{111} heterostructures for the thicknesses of AlN films of 5, 10, 20, 50 nm. For each film thickness, several methodologies will be used to identify the density of individual dislocation types. A technique of Electron Beam Induced Current (EBIC) in scanning electron microscope (SEM) will be used to characterize the electrical activity of AlN surfaces, in particular to quantify the drop of current around dislocations. Thanks to Nenovision new EBIC technique will be used to study dislocations.

Mark

CEITEC VUT-J-20-6385

Default language

Czech

People responsible

Gröger Roman, doc. Ing., Ph.D. et Ph.D. - fellow researcher
Pongrácz Jakub, Ing. - principal person responsible

Units

Science Support Office
- responsible department (2020-01-01 - 2020-12-31)
Central European Institute of Technology BUT
- beneficiary (2020-01-01 - 2020-12-31)

Results

PONGRÁCZ, J.; VACEK, P.; GRÖGER, R. Recombination activity of threading dislocations in MOVPE-grown AlN/Si {111} films etched by phosphoric acid. Journal of Applied Physics, 2023, vol. 134, no. 19, ISSN: 1089-7550.
Detail

Responsibility: Pongrácz Jakub, Ing.