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Publication detail
GRMELA, L. ŠIK, O.
Original Title
Metal-Semiconductor Junction Role in CdTe Detectors
Type
journal article in Web of Science
Language
English
Original Abstract
We have performed noise spectroscopy and charge transport properties analysis of CdTe detectors. Two types of high volume detectors are compared: Low ohmic (based on low resistivity crystal material 70 Ohm cm) and semi-insulating ( 10^8 Ohmcm).The theoretical fundaments of contacts role in detector system are given. We observed high asymmetry of IV characteristics of the lowohmic sample between normal and reverse bias, showing improper quality of contacts preparation, caused by higher concentration of impurities in metal-semiconductor area. This finding is supported by the fact that the low frequency noise spectral density is proportional to applied voltage with exponent 2.7, which is higher than the theoretical value 2.The semi-insulating sample very good contact rectification effect symmetry and less additive noise to the detector system.
Keywords
CdTe, transport characteristics, noise, contact quality
Authors
GRMELA, L.; ŠIK, O.
RIV year
2013
Released
12. 6. 2013
Publisher
Versita Publishing
Location
Warsaw, Poland
ISBN
1335-8243
Periodical
Acta Electrotechnica et Informatica
Year of study
13
Number
1
State
Slovak Republic
Pages from
22
Pages to
25
Pages count
4
URL
http://www.degruyter.com/view/j/aeei.2013.13.issue-1/aeei-2013-0004/aeei-2013-0004.xml?format=INT
BibTex
@article{BUT100283, author="Lubomír {Grmela} and Ondřej {Šik}", title="Metal-Semiconductor Junction Role in CdTe Detectors", journal="Acta Electrotechnica et Informatica", year="2013", volume="13", number="1", pages="22--25", doi="10.2478/aeei-2013-0004", issn="1335-8243", url="http://www.degruyter.com/view/j/aeei.2013.13.issue-1/aeei-2013-0004/aeei-2013-0004.xml?format=INT" }