Publication result detail

Sputter depth profiling of Mo/B4C/Si and Mo/Si multilayer nanostructures: A round-robin characterization by different techniques

BER, B.; BÁBOR, P.; BRUNKOV, P.; CHAPON, P.; DROZDOV, M.; DUDA, R.; KAZANTSEV, D.; POLKOVNIKOV, V.; YUNIN, P.; TOLSTOGOUZOV, A.

Original Title

Sputter depth profiling of Mo/B4C/Si and Mo/Si multilayer nanostructures: A round-robin characterization by different techniques

English Title

Sputter depth profiling of Mo/B4C/Si and Mo/Si multilayer nanostructures: A round-robin characterization by different techniques

Type

Peer-reviewed article not indexed in WoS or Scopus

Original Abstract

A round-robin characterization is reported on the sputter depth profiling of [60 x (3.0 nm Mo/0.3 nm B4C/3.7 nm Si)] and [60 x (3.5 nm Mo/3.5 nm Si)] stacks deposited on Si(111). Two different commercial secondary ion mass spectrometers with time-of-flight and magnetic-sector analyzers, a pulsed radio frequency glow discharge optical emission spectrometer, and a home-built time-of-flight low-energy ion scattering and quadrupole-based secondary ion mass spectrometer were used. The influence of the experimental conditions, especially the type and energy of sputter ions, on the depth profiles of Mo/Si nanostructures with and without B4C barrier layers is discussed in terms of depth resolution, modulation factor and rapidity of analysis. The pros and cons of each instrumental approach are summarized.

English abstract

A round-robin characterization is reported on the sputter depth profiling of [60 x (3.0 nm Mo/0.3 nm B4C/3.7 nm Si)] and [60 x (3.5 nm Mo/3.5 nm Si)] stacks deposited on Si(111). Two different commercial secondary ion mass spectrometers with time-of-flight and magnetic-sector analyzers, a pulsed radio frequency glow discharge optical emission spectrometer, and a home-built time-of-flight low-energy ion scattering and quadrupole-based secondary ion mass spectrometer were used. The influence of the experimental conditions, especially the type and energy of sputter ions, on the depth profiles of Mo/Si nanostructures with and without B4C barrier layers is discussed in terms of depth resolution, modulation factor and rapidity of analysis. The pros and cons of each instrumental approach are summarized.

Keywords

Sputter depth profiling; Glow discharge optical emission spectroscopy (GDOES); Mo/Si interferential mirror; Round-robin characterization; Secondary ion mass spectrometry (SIMS); Time-of-flight low-energy ion scattering (TOF-LEIS)

Key words in English

Sputter depth profiling; Glow discharge optical emission spectroscopy (GDOES); Mo/Si interferential mirror; Round-robin characterization; Secondary ion mass spectrometry (SIMS); Time-of-flight low-energy ion scattering (TOF-LEIS)

Authors

BER, B.; BÁBOR, P.; BRUNKOV, P.; CHAPON, P.; DROZDOV, M.; DUDA, R.; KAZANTSEV, D.; POLKOVNIKOV, V.; YUNIN, P.; TOLSTOGOUZOV, A.

RIV year

2014

Released

14.06.2013

ISBN

0040-6090

Periodical

Thin Solid Films

Volume

540

Number

1

State

Kingdom of the Netherlands

Pages from

96

Pages to

105

Pages count

10

BibTex

@article{BUT100495,
  author="B. {Ber} and Petr {Bábor} and P.N. {Brunkov} and Patric {Chapon} and M.N. {Drozdov} and Radek {Duda} and D. {Kazantsev} and V.N. {Polkovnikov} and P. {Yunin} and A. {Tolstogouzov}",
  title="Sputter depth profiling of Mo/B4C/Si and Mo/Si multilayer nanostructures: A round-robin characterization by different techniques",
  journal="Thin Solid Films",
  year="2013",
  volume="540",
  number="1",
  pages="96--105",
  issn="0040-6090"
}