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ABUETWIRAT, I. CHVÁTAL, M.
Original Title
TEMPERATURE AND FREQUENCY DEPENDENCE OF COMPLEX PERMITTIVITY FOR NIOBIUM OXIDE FILM AT COMMERCIAL ELECTROLYTIC CAPACITOR
Type
conference paper
Language
English
Original Abstract
The complex permittivity of thin oxide film at commercial niobium oxide capacitor was measured at different temperature range 218-373 K by using Janis cryostat system, with HP 4284A impedance analyzer with frequencies from 20 Hz to 1MHz. The real part of complex permittivity increases with temperature and decreases with frequency, the imaginary part of complex permittivity displays abroad maximum peak whose position shifts with temperature to a higher frequency region with an activation energy 0.055 eV. The measured imaginary parts of complex permittivity were studied by the graphical analysis of the obtained data as proposed by Havriliak -Negami (HN) equation.
Keywords
Real part of complex permittivity, imaginary part of complex permittivity, niobium oxide capacitor, Havriliak-Negami equation.
Authors
ABUETWIRAT, I.; CHVÁTAL, M.
RIV year
2012
Released
29. 8. 2012
Publisher
FEKT VUT Brno
Location
VSACKÝ CÁB
ISBN
978-80-214-4579-6
Book
Proceedings of the conference VSACKÝ CÁB 2012
Edition
1
Edition number
Pages from
4
Pages to
7
Pages count
BibTex
@inproceedings{BUT100593, author="Inas Faisel {Abuetwirat} and Miloš {Chvátal}", title="TEMPERATURE AND FREQUENCY DEPENDENCE OF COMPLEX PERMITTIVITY FOR NIOBIUM OXIDE FILM AT COMMERCIAL ELECTROLYTIC CAPACITOR", booktitle="Proceedings of the conference VSACKÝ CÁB 2012", year="2012", series="1", number="1", pages="4--7", publisher="FEKT VUT Brno", address="VSACKÝ CÁB", isbn="978-80-214-4579-6" }