Ultra-low voltage tunable transconductor based on bulk-driven quasi-floating-gate technique

journal article in Web of Science

English

This paper presents ultra-low voltage transconductor using a new bulk-driven quasi-floating-gate technique (BD-QFG). This technique leads to significant increase in the transconductance and the bandwidth values of the MOS transistor (MOST) under ultra-low voltage condition. The proposed CMOS structure of the transconductor is capable to work with ultra-low supply voltage of +-300 mV and low power consumption of 18 uW. The transconductance value of the transconductor is tunable by external resistor with wide linear range. To prove the validation of the new described technique a second order Gm-C multifunction filter is presented as one of possible application. The simulation results using 0.18 um CMOS N-Well process from TSMC show the attractive features of the proposed circuit.

Floating-gate MOST; quasi-floating-gate MOST, bulk-driven MOST; transconductor.

KHATEB, F.; KHATIB, N.; PROMMEE, P.; JAIKLA, W.; FUJCIK, L.

2013

2. 9. 2013

Singapore

0218-1266

JOURNAL OF CIRCUITS SYSTEMS AND COMPUTERS

2013 (22)

8, IF: 0.238

Republic of Singapore

1350073-1

1350073-13

13

http://dx.doi.org/10.1142/S0218126613500734