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Publication detail
ŠIK, O. TRČKA, T. GRMELA, L. VONDRA, M.
Original Title
"Effect of High Operating Temperature on Electrical Quantities of CdTe Radiation Detectors
English Title
Type
conference paper
Language
Czech
Original Abstract
Analysis electrical properties change of a semiconductor radiation detector, based on Cadmium-Telluride material has been carried out. The detector was exposed to temperature 100C for time period of 24 hours. Heat stress caused an increase of leakage currents by two orders. New defect energy levels caused difference in detector current transit, typical for the polarization effect. The noise spectral density of the detector after thermal stressing increases with the power of 6.81, which is significantly higher value than 2.70, measured before thermal stressing.
English abstract
Analysis electrical properties change of a semiconductor radiation detector, based on Cadmium-Telluride material has been carried out. The detector was exposed to temperature 100 C for time period of 24 hours. Heat stress caused an increase of leakage currents by two orders. New defect energy levels caused difference in detector current transit, typical for the polarization effect. The noise spectral density of the detector after thermal stressing increases with the power of 6.81, which is significantly higher value than 2.70, measured before thermal stressing.
Keywords
CdTe, Noise, Reliability
Key words in English
CdTe, šum, spolehlivost
Authors
ŠIK, O.; TRČKA, T.; GRMELA, L.; VONDRA, M.
RIV year
2013
Released
6. 5. 2013
Publisher
Institute of Research Engineers and Doctors
Location
Kuala Lumpur, Malaisie
ISBN
978-981-07-6261-2
Book
Proc. of the Second Intl. Conf. on Advances in Electronic Devices and Circuits
Edition
1
Edition number
Pages from
60
Pages to
63
Pages count
4
BibTex
@inproceedings{BUT101481, author="Ondřej {Šik} and Tomáš {Trčka} and Lubomír {Grmela} and Marek {Vondra}", title="{"}Effect of High Operating Temperature on Electrical Quantities of CdTe Radiation Detectors", booktitle="Proc. of the Second Intl. Conf. on Advances in Electronic Devices and Circuits", year="2013", series="1", number="1", pages="60--63", publisher="Institute of Research Engineers and Doctors", address="Kuala Lumpur, Malaisie", isbn="978-981-07-6261-2" }