Publication detail

An Accurate DC and RF Modeling of Nonlinear Spiral Divider in High Voltage MOSFET Transistor

PTÁČEK, K.

Original Title

An Accurate DC and RF Modeling of Nonlinear Spiral Divider in High Voltage MOSFET Transistor

Type

conference paper

Language

English

Original Abstract

This paper presents an accurate DC and RF modeling of nonlinear spiral high resistance polysilicon divider. The spiral divider is a sensing part of the high voltage start-up MOSFET transistor operating up to 700 V. The strong electric field in low doped drain drift area located under the low doped polysilicon spiral divider results in parasitic effects that have a significant influence on DC and RF device characteristics and makes divider ratio voltage and frequency dependent. This paper demonstrates the strucyure of a proposed macro model, implemented voltage and frequency dependency, and physical explanation of these phenomena. Finally, the comparison of measured data vs. simulation is presented in order to confirm the model validity.

Keywords

MOSFET; modeling; spiral polysilicon voltage divider; high-voltage devices

Authors

PTÁČEK, K.

RIV year

2012

Released

29. 10. 2012

Publisher

IEEE

Location

Piscataway

ISBN

978-1-4673-2475-5

Book

2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology

Pages from

1

Pages to

3

Pages count

3

BibTex

@inproceedings{BUT101652,
  author="Karel {Ptáček}",
  title="An Accurate DC and RF Modeling of Nonlinear Spiral Divider in High Voltage MOSFET Transistor",
  booktitle="2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology",
  year="2012",
  pages="1--3",
  publisher="IEEE",
  address="Piscataway",
  isbn="978-1-4673-2475-5"
}