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PROFANT, T. KLUSÁK, J. ŠEVEČEK, O. KOTOUL, M. HRSTKA, M. MARCIÁN, P.
Original Title
An effect of the first non-singular term of the Williams asymptotic expansion to the stability of the bi-material orthotropic notch
Type
conference paper
Language
English
Original Abstract
The domain of the generalized stress intensity factors dominance ahead of the notch tip can be rather small with respect to the length of the perturbing cracks initiated from the tip of the notch. Thus the non-singular terms of the stress asymptotic expansion at the notch tip would play an important role in the notch tip stability. Following the procedures dealing with complex potential theory and path-independent two-state integrals developed for the singular stress analysis of the stress concentrators one can evaluate their magnitude and include them to the energy release rate of the preexisting crack initiated from the notch tip applying the matched asymptotic procedure. The presented analysis should lead to better understanding of the notch stability process and precising of the notch stability criteria.
Keywords
Orthotropic bi-material notch; two-state integral; psi-integral; stress non-singular terms; T-stress; matched asymptotic expansion
Authors
PROFANT, T.; KLUSÁK, J.; ŠEVEČEK, O.; KOTOUL, M.; HRSTKA, M.; MARCIÁN, P.
RIV year
2014
Released
6. 1. 2014
Publisher
Trans Tech Publications
Location
Switzerland
ISBN
1013-9826
Periodical
Key Engineering Materials (print)
Year of study
592-593
Number
State
Swiss Confederation
Pages from
745
Pages to
748
Pages count
4
BibTex
@inproceedings{BUT102806, author="Tomáš {Profant} and Jan {Klusák} and Oldřich {Ševeček} and Michal {Kotoul} and Miroslav {Hrstka} and Petr {Marcián}", title="An effect of the first non-singular term of the Williams asymptotic expansion to the stability of the bi-material orthotropic notch", booktitle="Materials Structure & Micromechanics of Fracture VII", year="2014", journal="Key Engineering Materials (print)", volume="592-593", number="2014", pages="745--748", publisher="Trans Tech Publications", address="Switzerland", doi="10.4028/www.scientific.net/KEM.592-593.745", issn="1013-9826" }