Publication detail

Noise sources in interface between mono-crystalline and amorphous semiconductors

PAVELKA, J. ŠIKULA, J. TACANO, M. CHVÁTAL, M. DALLAEVA, D. GRMELA, L.

Original Title

Noise sources in interface between mono-crystalline and amorphous semiconductors

Type

conference paper

Language

English

Original Abstract

RTS noise in Si/SiO2, InGaAs/InAlAs and GaN/AlGaN structures was analysed and several important trap parameters, such as cross-section, activation energy and position in the channel could be estimated.

Keywords

RTS noise, trap, GaN, InGaAs

Authors

PAVELKA, J.; ŠIKULA, J.; TACANO, M.; CHVÁTAL, M.; DALLAEVA, D.; GRMELA, L.

RIV year

2013

Released

25. 11. 2013

Publisher

Comenius University

Location

Bratislava

ISBN

978-80-223-3501-0

Book

Proceedings of 8th solid state surfaces and interfaces

Pages from

128

Pages to

129

Pages count

2

BibTex

@inproceedings{BUT103237,
  author="Jan {Pavelka} and Josef {Šikula} and Munecazu {Tacano} and Miloš {Chvátal} and Dinara {Sobola} and Lubomír {Grmela}",
  title="Noise sources in interface between mono-crystalline and amorphous semiconductors",
  booktitle="Proceedings of 8th solid state surfaces and interfaces",
  year="2013",
  pages="128--129",
  publisher="Comenius University",
  address="Bratislava",
  isbn="978-80-223-3501-0"
}