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Publication detail
VLASSIS, S. KHATEB, F.
Original Title
Automatic tuning circuit for bulk-controlled sub-threshold MOS resistors
Type
journal article in Web of Science
Language
English
Original Abstract
In this letter, a simple automatic tuning circuit is proposed which is suitable for controlling the very large channel resistance of weak-inverted transistors operated in the linear regime. The channel resistance for 1.2Mohm nominal value presents about +-0.6% variation for -20C to 80C temperature range, +-5% variation at process/temperature (P/T) corners and THD=-42dB for differential signals. The supply voltage was VDD=1V and the current consumption about 470nA. The proposed concept and the performance were confirmed and evaluated by simulations using standard 0.35um CMOS process.
Keywords
MOS-resistor
Authors
VLASSIS, S.; KHATEB, F.
RIV year
2014
Released
4. 3. 2014
Location
England
ISBN
0013-5194
Periodical
Electronics Letters
Year of study
2014 (50)
Number
6, IF: 1.068
State
United Kingdom of Great Britain and Northern Ireland
Pages from
432
Pages to
434
Pages count
2
URL
http://dx.doi.org/10.1049/el.2013.4181
BibTex
@article{BUT105722, author="Spyridon {Vlassis} and Fabian {Khateb}", title="Automatic tuning circuit for bulk-controlled sub-threshold MOS resistors", journal="Electronics Letters", year="2014", volume="2014 (50)", number="6, IF: 1.068", pages="432--434", doi="10.1049/el.2013.4181", issn="0013-5194", url="http://dx.doi.org/10.1049/el.2013.4181" }