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MACH, J. ŠAMOŘIL, T. KOLÍBAL, M. ZLÁMAL, J. VOBORNÝ, S. BARTOŠÍK, M. ŠIKOLA, T.
Original Title
Optimization of ion-atomic beam source for deposition of GaN ultrathin films
Type
journal article in Web of Science
Language
English
Original Abstract
We describe the optimization and application of an ion-atomic beam source for ion-beam-assisted deposition of ultrathin films in ultrahigh vacuum. The device combines an effusion cell and electronimpact ion beam source to produce ultra-low energy (20–200 eV) ion beams and thermal atomic beams simultaneously. The source was equipped with a focusing system of electrostatic electrodes increasing the maximum nitrogen ion current density in the beam of a diameter of 15 mm by one order of magnitude (j 1000 nA/cm2). Hence, a successful growth of GaN ultrathin films on Si(111) 7 x 7 substrate surfaces at reasonable times and temperatures significantly lower (RT, 300 C) than in conventional metalorganic chemical vapor deposition technologies (1000 C) was achieved. The chemical composition of these films was characterized in situ by X-ray Photoelectron Spectroscopy and morphology ex situ using Scanning Electron Microscopy. It has been shown that the morphology of GaN layers strongly depends on the relative Ga-N bond concentration in the layers.
Keywords
Ion souce; Atomic source; GaN; Surfaces
Authors
MACH, J.; ŠAMOŘIL, T.; KOLÍBAL, M.; ZLÁMAL, J.; VOBORNÝ, S.; BARTOŠÍK, M.; ŠIKOLA, T.
RIV year
2014
Released
15. 8. 2014
ISBN
0034-6748
Periodical
Review of Scientific Instruments
Year of study
85
Number
8
State
United States of America
Pages from
083302-1
Pages to
083302-5
Pages count
5