Přístupnostní navigace
E-application
Search Search Close
Publication detail
STEVIE, F. SEDLÁČEK, L. BÁBOR, P. JIRUŠE, J. PRINCIPE, E. KLOSOVÁ, K.
Original Title
FIB-SIMS quantification using TOF-SIMS with Ar and Xe plasma sources
Type
journal article in Web of Science
Language
English
Original Abstract
A novel time of flight SIMS analyzer provides a new approach to SIMS analysis as an addition to a focused ion beam SEM instrument. The combination of this analyzer with a high current plasma ion source offers new opportunities for analysis, particularly in the study of coatings, which require ultra-deep profiling. Use of this instrumentation showed the ability to detect and quantify a number of elements. Quantification was obtained for Li, Na, K ion implanted in Si and for B in a sample with known concentration. Use of the electron beam from the electron column permitted analysis of 300-nm SiO2/Si implanted with BF2.
Keywords
SIMS depth profiling; plasma ion source; TOF-SIMS analyzer; FIB-SIMS; SIMS quantification; high sputtering rate
Authors
STEVIE, F.; SEDLÁČEK, L.; BÁBOR, P.; JIRUŠE, J.; PRINCIPE, E.; KLOSOVÁ, K.
RIV year
2014
Released
24. 11. 2014
ISBN
0142-2421
Periodical
Surface and Interface Analysis
Year of study
46
Number
S1
State
United Kingdom of Great Britain and Northern Ireland
Pages from
285
Pages to
287
Pages count
3
BibTex
@article{BUT110788, author="F. A. {Stevie} and L. {Sedláček} and Petr {Bábor} and Jaroslav {Jiruše} and E. {Principe} and K. {Klosová}", title="FIB-SIMS quantification using TOF-SIMS with Ar and Xe plasma sources", journal="Surface and Interface Analysis", year="2014", volume="46", number="S1", pages="285--287", doi="10.1002/sia.5483", issn="0142-2421" }