Publication detail

FIB-SIMS quantification using TOF-SIMS with Ar and Xe plasma sources

STEVIE, F. SEDLÁČEK, L. BÁBOR, P. JIRUŠE, J. PRINCIPE, E. KLOSOVÁ, K.

Original Title

FIB-SIMS quantification using TOF-SIMS with Ar and Xe plasma sources

Type

journal article in Web of Science

Language

English

Original Abstract

A novel time of flight SIMS analyzer provides a new approach to SIMS analysis as an addition to a focused ion beam SEM instrument. The combination of this analyzer with a high current plasma ion source offers new opportunities for analysis, particularly in the study of coatings, which require ultra-deep profiling. Use of this instrumentation showed the ability to detect and quantify a number of elements. Quantification was obtained for Li, Na, K ion implanted in Si and for B in a sample with known concentration. Use of the electron beam from the electron column permitted analysis of 300-nm SiO2/Si implanted with BF2.

Keywords

SIMS depth profiling; plasma ion source; TOF-SIMS analyzer; FIB-SIMS; SIMS quantification; high sputtering rate

Authors

STEVIE, F.; SEDLÁČEK, L.; BÁBOR, P.; JIRUŠE, J.; PRINCIPE, E.; KLOSOVÁ, K.

RIV year

2014

Released

24. 11. 2014

ISBN

0142-2421

Periodical

Surface and Interface Analysis

Year of study

46

Number

S1

State

United Kingdom of Great Britain and Northern Ireland

Pages from

285

Pages to

287

Pages count

3

BibTex

@article{BUT110788,
  author="F. A. {Stevie} and L. {Sedláček} and Petr {Bábor} and Jaroslav {Jiruše} and E. {Principe} and K. {Klosová}",
  title="FIB-SIMS quantification using TOF-SIMS with Ar and Xe plasma sources",
  journal="Surface and Interface Analysis",
  year="2014",
  volume="46",
  number="S1",
  pages="285--287",
  doi="10.1002/sia.5483",
  issn="0142-2421"
}