Publication detail

A method for measuring the effect of total ionising dose on temperature coefficients of semiconductor devices

Jiri Hofman

Original Title

A method for measuring the effect of total ionising dose on temperature coefficients of semiconductor devices

Type

lecture

Language

English

Original Abstract

This work presents a new test method that allows in-situ measurements of radiation-induced changes in temperature coefficients to be made. The preliminary results of a pilot experiment on commercial PMOS transistors and voltage references will be presented and discussed.

Keywords

total ionizing dose, PMOS transistor, voltage reference, temperature coefficient

Authors

Jiri Hofman

Released

25. 3. 2015

Pages from

1

Pages to

26

Pages count

26

BibTex

@misc{BUT114090,
  author="Jiří {Hofman} and Jiří {Háze} and Richard {Sharp} and Andrew {Holmes-Siedle}",
  title="A method for measuring the effect of total ionising dose on temperature coefficients of semiconductor devices",
  year="2015",
  pages="1--26",
  note="lecture"
}