Publication detail

Epitaxy of silicon carbide on silicon: micromorphological analysis of growth surface evolution

RAMAZANOV, S. TALU, S. DALLAEVA, D. STACH, S. RAMAZANOV, G.

Original Title

Epitaxy of silicon carbide on silicon: micromorphological analysis of growth surface evolution

Type

journal article in Web of Science

Language

English

Original Abstract

The main purpose of our research was the study of evolution of silicon carbide films on silicon by micromorphological analysis. Surface micromorphologies of Silicon Carbide epilayers with two different thicknesses were compared by means of fractal geometry. Silicon Carbide films were prepared on Si substrates by magnetron sputtering of polycrystalline target SiC in Ar atmosphere (99.999% purity). Synthesis of qualitative SiC/Si templates solves the questions of large diameter SiC single-crystal wafers formation. This technology decreases financial expenditure and provides integration of SiC into silicon technology. These hybrid substrates with buffer layer of high oriented SiC are useful for growth of both wide band gap materials (SiC, AlN, GaN) and graphene. The main problem of SiC heteroepitaxy on Si (111) is the large difference (~ 20%) of the lattice parameters. Fractal analysis of surface morphology of heteroepitaxial films could help to understand the films growth mechanisms. The 3D (three-dimensional) surfaces revealed a fractal structure at the nanometer scale. The fractal dimension (D) provided global quantitative values that characterize the scale properties of surface geometry.

Keywords

epitaxy, silicon carbide epilayer, atomic force microscopy, magnetron sputtering, substrate, surface roughness, fractal analysis

Authors

RAMAZANOV, S.; TALU, S.; DALLAEVA, D.; STACH, S.; RAMAZANOV, G.

RIV year

2015

Released

10. 8. 2015

Publisher

Elsevier

ISBN

0749-6036

Periodical

SUPERLATTICES AND MICROSTRUCTURES

Year of study

2015

Number

85

State

United Kingdom of Great Britain and Northern Ireland

Pages from

395

Pages to

402

Pages count

7

BibTex

@article{BUT115565,
  author="Shihgasan {Ramazanov} and Stefan {Talu} and Dinara {Sobola} and Sebastian {Stach} and Gusejn {Ramazanov}",
  title="Epitaxy of silicon carbide on silicon: micromorphological analysis of growth surface evolution",
  journal="SUPERLATTICES AND MICROSTRUCTURES",
  year="2015",
  volume="2015",
  number="85",
  pages="395--402",
  doi="10.1016/j.spmi.2015.08.007",
  issn="0749-6036"
}