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RAMAZANOV, S. TALU, S. DALLAEVA, D. STACH, S. RAMAZANOV, G.
Original Title
Epitaxy of silicon carbide on silicon: micromorphological analysis of growth surface evolution
Type
journal article in Web of Science
Language
English
Original Abstract
The main purpose of our research was the study of evolution of silicon carbide films on silicon by micromorphological analysis. Surface micromorphologies of Silicon Carbide epilayers with two different thicknesses were compared by means of fractal geometry. Silicon Carbide films were prepared on Si substrates by magnetron sputtering of polycrystalline target SiC in Ar atmosphere (99.999% purity). Synthesis of qualitative SiC/Si templates solves the questions of large diameter SiC single-crystal wafers formation. This technology decreases financial expenditure and provides integration of SiC into silicon technology. These hybrid substrates with buffer layer of high oriented SiC are useful for growth of both wide band gap materials (SiC, AlN, GaN) and graphene. The main problem of SiC heteroepitaxy on Si (111) is the large difference (~ 20%) of the lattice parameters. Fractal analysis of surface morphology of heteroepitaxial films could help to understand the films growth mechanisms. The 3D (three-dimensional) surfaces revealed a fractal structure at the nanometer scale. The fractal dimension (D) provided global quantitative values that characterize the scale properties of surface geometry.
Keywords
epitaxy, silicon carbide epilayer, atomic force microscopy, magnetron sputtering, substrate, surface roughness, fractal analysis
Authors
RAMAZANOV, S.; TALU, S.; DALLAEVA, D.; STACH, S.; RAMAZANOV, G.
RIV year
2015
Released
10. 8. 2015
Publisher
Elsevier
ISBN
0749-6036
Periodical
SUPERLATTICES AND MICROSTRUCTURES
Year of study
Number
85
State
United Kingdom of Great Britain and Northern Ireland
Pages from
395
Pages to
402
Pages count
7
BibTex
@article{BUT115565, author="Shihgasan {Ramazanov} and Stefan {Talu} and Dinara {Sobola} and Sebastian {Stach} and Gusejn {Ramazanov}", title="Epitaxy of silicon carbide on silicon: micromorphological analysis of growth surface evolution", journal="SUPERLATTICES AND MICROSTRUCTURES", year="2015", volume="2015", number="85", pages="395--402", doi="10.1016/j.spmi.2015.08.007", issn="0749-6036" }