Publication detail

Diagnostics of GaAs Light Emitting Diode PN Junctions

KOKTAVÝ, P., KOKTAVÝ, B.

Original Title

Diagnostics of GaAs Light Emitting Diode PN Junctions

Type

conference paper

Language

English

Original Abstract

Tracing the bi-stable mechanism of reverse-biased junction conductivity can be used as an efficient tool to study PN junction inhomegeneities. This conductivity mechanism is usually accounted for in terms of crystalline lattice imperfections, dislocations, or metallic precipitates in the PN junction region. Two methods have been suggested for practical application: first, a tentative method to distinguish between the bi-stable and the multi-stable conductivity mechanism, and, second, a noise current rms value versus DC current plot based method.

Keywords

PN Junction, LED Diode, Microplasma Noise

Authors

KOKTAVÝ, P., KOKTAVÝ, B.

RIV year

2004

Released

1. 1. 2004

Publisher

Kluwer Academic Publishers

Location

Dordrecht, Belgium

ISBN

1-4020-2169-0

Book

Advanced Experimental Methods for Noise Research in Nanoscale Electronic Devices

Pages from

337

Pages to

344

Pages count

8

BibTex

@inproceedings{BUT11707,
  author="Pavel {Koktavý} and Bohumil {Koktavý}",
  title="Diagnostics of GaAs Light Emitting Diode PN Junctions",
  booktitle="Advanced Experimental Methods for Noise Research in Nanoscale Electronic Devices",
  year="2004",
  pages="8",
  publisher="Kluwer Academic Publishers",
  address="Dordrecht, Belgium",
  isbn="1-4020-2169-0"
}