Publication detail

1 kW LLC Resonant Converter with HV GaN Switches

VAŠÍČEK, A.

Original Title

1 kW LLC Resonant Converter with HV GaN Switches

Type

conference paper

Language

English

Original Abstract

Properties of the new high voltage (650 V) GaN HEMT cascodes are presented and compared with those of their silicon counterparts. The short switching times, low Qg and Coss along with low RDSon of GaN HEMTs make them ideal for high frequency DC/DC conversion. A 1kW, 400 V to 48 V LLC resonant DC/DC converter design is described and various design constraints are discussed. Presented waveforms and efficiency measurements prove the GaN HEMTs are the devices of choice for new high efficiency and power density designs.

Keywords

LLC GaN ZVS efficiency magnetics cascode

Authors

VAŠÍČEK, A.

RIV year

2015

Released

19. 5. 2015

Publisher

VDE

Location

Norimberk, DE

ISBN

978-3-8007-3924-0

Book

PCIM Europe 2015; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management; Proceedings of

Pages from

1

Pages to

7

Pages count

7

URL

http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=7149129&isnumber=7148817

BibTex

@inproceedings{BUT117848,
  author="Adam {Vašíček}",
  title="1 kW LLC Resonant Converter with HV GaN Switches",
  booktitle="PCIM Europe 2015; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management; Proceedings of",
  year="2015",
  pages="1--7",
  publisher="VDE",
  address="Norimberk, DE",
  isbn="978-3-8007-3924-0",
  url="http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=7149129&isnumber=7148817"
}