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GABLECH, I. SVATOŠ, V. CAHA, O. HRABOVSKÝ, M. PRÁŠEK, J. HUBÁLEK, J. ŠIKOLA, T.
Original Title
Preparation of (001) preferentially oriented titanium thin films by ion-beam sputtering deposition on thermal silicon dioxide
Type
journal article in Web of Science
Language
English
Original Abstract
We propose the ion-beam sputtering deposition providing Ti thin films of desired crystallographic orientation and smooth surface morphology not obtainable with conventional deposition techniques such as magnetron sputtering and vacuum evaporation. The sputtering was provided by argon broad ion beams generated by a Kaufman ion-beam source. In order to achieve the optimal properties of thin film, we investigated the Ti thin films deposited on an amorphous thermal silicon dioxide using X-ray diffraction, and atomic force microscopy. We have optimized deposition conditions for growing of thin films with the only (001) preferential orientation of film crystallites, and achieved ultra-low surface roughness of 0.55 nm. The deposited films have been found to be stable upon annealing up to 300 °C which is often essential for envisaging subsequent deposition of piezoelectric AlN thin films.
Keywords
Ion-beam sputtering deposition, Kaufman ion-beam source, titanium, thin film, (001) preferential orientation, surface roughness, XRD, AFM
Authors
GABLECH, I.; SVATOŠ, V.; CAHA, O.; HRABOVSKÝ, M.; PRÁŠEK, J.; HUBÁLEK, J.; ŠIKOLA, T.
Released
1. 4. 2016
Publisher
Springer US
Location
New York
ISBN
0022-2461
Periodical
Journal of Materials Science
Year of study
51
Number
7
State
United States of America
Pages from
3329
Pages to
3336
Pages count
8
URL
http://link.springer.com/article/10.1007/s10853-015-9648-y
Full text in the Digital Library
http://hdl.handle.net/11012/203130
BibTex
@article{BUT118989, author="Imrich {Gablech} and Vojtěch {Svatoš} and Ondřej {Caha} and Miloš {Hrabovský} and Jan {Prášek} and Jaromír {Hubálek} and Tomáš {Šikola}", title="Preparation of (001) preferentially oriented titanium thin films by ion-beam sputtering deposition on thermal silicon dioxide", journal="Journal of Materials Science", year="2016", volume="51", number="7", pages="3329--3336", doi="10.1007/s10853-015-9648-y", issn="0022-2461", url="http://link.springer.com/article/10.1007/s10853-015-9648-y" }