Publication detail

A Method for In-Situ, Total Ionising Dose Measurement of Temperature Coefficients of Semiconductor Device Parameters

HOFMAN, J. HÁZE, J. SHARP, R. HOLMES-SIEDLE, A.

Original Title

A Method for In-Situ, Total Ionising Dose Measurement of Temperature Coefficients of Semiconductor Device Parameters

Type

journal article in Web of Science

Language

English

Original Abstract

This work presents and discusses a test method developed to allow the measurement of total ionising dose induced changes in temperature effects on electronic devices for space and nuclear applications. Two demonstration experiments testing commercial PMOS transistors were performed, using different methods of I-V curve measurement. The temperature of the devices during irradiation was controlled precisely using a commercial thermoelectric cooler. A programmable temperature controller combining digital and analogue control techniques was developed for this project. The experimental results allow better insight into the field of temperature sensitivity of PMOS devices.

Keywords

Automated test equipment, MTC, PMOS, RADFET, TID, temperature coefficients, temperature effects test methods, test software, thermoelectric cooler, thermometers

Authors

HOFMAN, J.; HÁZE, J.; SHARP, R.; HOLMES-SIEDLE, A.

RIV year

2015

Released

26. 11. 2015

Publisher

IEEE Periodicals

Location

Piscataway, NJ 08854 USA

ISBN

0018-9499

Periodical

IEEE TRANSACTIONS ON NUCLEAR SCIENCE

Year of study

62

Number

6

State

United States of America

Pages from

2525

Pages to

2531

Pages count

6

URL

http://ieeexplore.ieee.org/xpl/abstractAuthors.jsp?arnumber=7339494&newsearch=true&queryText=%20method%20for%20measuring%20the%20effect%20of%20total%20ionising%20dose%20on%20temperature%20coefficients%20of%20semiconductor%20devices

BibTex

@article{BUT119754,
  author="Jiří {Hofman} and Jiří {Háze} and Richard {Sharp} and Andrew {Holmes-Siedle}",
  title="A Method for In-Situ, Total Ionising Dose Measurement of Temperature Coefficients of Semiconductor Device Parameters",
  journal="IEEE TRANSACTIONS ON NUCLEAR SCIENCE",
  year="2015",
  volume="62",
  number="6",
  pages="2525--2531",
  doi="10.1109/TNS.2015.2498948",
  issn="0018-9499",
  url="http://ieeexplore.ieee.org/xpl/abstractAuthors.jsp?arnumber=7339494&newsearch=true&queryText=%20method%20for%20measuring%20the%20effect%20of%20total%20ionising%20dose%20on%20temperature%20coefficients%20of%20semiconductor%20devices"
}