Polarization anisotropy of the emission from type-II quantum dots

journal article in Web of Science

English

We study the polarization response of the emission from type-II GaAsSb capped InAs quantum dots. The theoretical prediction based on the calculations of the overlap integrals of the single-particle states obtained in the k - p framework is given. This is verified experimentally by polarization resolved photoluminescence measurements on samples with the type-II confinement. We show that the polarization anisotropy might be utilized to find the vertical position of the hole wave function and its orientation with respect to crystallographic axes of the sample. A proposition for usage in the information technology as a room temperature photonic gate operating at the communication wavelengths as well as a simple model to estimate the energy of fine-structure splitting for type-II GaAsSb capped InAs QDs are given.

Type II quantum dots; Emission; Theory

KLENOVSKÝ, P.; HEMZAL, D.; STEINDL, P.; ZIKOVÁ, M.; KŘÁPEK, V.; HUMLÍČEK, J.

2015

15. 12. 2015

American Physical Society

0163-1829

PHYSICAL REVIEW B

92

24

United States of America

241302-1

241302-5

5

https://journals.aps.org/prb/abstract/10.1103/PhysRevB.92.241302

http://hdl.handle.net/11012/201032