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OHYA, H. TACANO, M. PAVELKA, J. ŠIKULA, J. MUSHA, T.
Original Title
Ultimate Absolute Hooge Parameter for Semiconductors and Graphene
Type
conference paper
Language
English
Original Abstract
The temperature dependence of the Hooge parameter alfaH for both n- and p-type InGaAs heterostructures with as-grown non-alloyed ohmic contacts shows good agreement with that estimated from the harmonic coupling model; alfaH is given by aa/lambda, where aa is the lattice constant and lambda is the mean free path of the semiconductor material. Experimental results for several other semiconducting materials normalized by the mobility ratio also verify the validity of the model. We are now able to estimate the Hooge parameter theoretically from only the material parameters, whereas the experimental results are scattered over several orders of magnitude.
Keywords
Hooge parameter; mean free path; mobility fluctuations; InGaAs; InP; GaAs
Authors
OHYA, H.; TACANO, M.; PAVELKA, J.; ŠIKULA, J.; MUSHA, T.
RIV year
2015
Released
9. 10. 2015
Publisher
IEEE
ISBN
978-1-4673-8335-6
Book
Noise and Fluctuations (ICNF)
Pages from
1
Pages to
4
Pages count
URL
http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7288616
BibTex
@inproceedings{BUT120497, author="H. {Ohya} and Munecazu {Tacano} and Jan {Pavelka} and Josef {Šikula} and Toshimitsu {Musha}", title="Ultimate Absolute Hooge Parameter for Semiconductors and Graphene ", booktitle="Noise and Fluctuations (ICNF)", year="2015", pages="1--4", publisher="IEEE", doi="10.1109/ICNF.2015.7288616", isbn="978-1-4673-8335-6", url="http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7288616" }