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KŘÁPEK, V. KLENOVSKÝ, P. ŠIKOLA, T.
Original Title
Type-I and Type-II Confinement in Quantum Dots: Excitonic Fine Structure
Type
journal article in Web of Science
Language
English
Original Abstract
We have theoretically studied type-I and type-II confinement in InAs quantum dots with GaAs1−ySby capping layer. The character of the confinement can be adjusted by the Sb content. We have found that upon the transition from type-I to type-II confinement the hole wave functions change the topology from a compact shape to a twosegment shape, resulting in the complex changes in the exciton fine structure splitting with zero values at particular compositions. Additionally, a high exciton radiative recombination probability is preserved even in type-II. This allows to design strongly luminescent quantum dots with naturally low fine structure splitting, which could serve as sources of entangled photon pairs for quantum communication.
Keywords
Quantum Dots; Fine structure; GaAs; Excitons
Authors
KŘÁPEK, V.; KLENOVSKÝ, P.; ŠIKOLA, T.
Released
15. 1. 2016
ISBN
0587-4246
Periodical
ACTA PHYSICA POLONICA A
Year of study
129
Number
1A
State
Republic of Poland
Pages from
A66
Pages to
A69
Pages count
4
URL
http://przyrbwn.icm.edu.pl/APP/PDF/129/a129z1ap13.pdf