Type-I and Type-II Confinement in Quantum Dots: Excitonic Fine Structure

Type-I and Type-II Confinement in Quantum Dots: Excitonic Fine Structure

WoS Article

We have theoretically studied type-I and type-II confinement in InAs quantum dots with GaAs1−ySby capping layer. The character of the confinement can be adjusted by the Sb content. We have found that upon the transition from type-I to type-II confinement the hole wave functions change the topology from a compact shape to a twosegment shape, resulting in the complex changes in the exciton fine structure splitting with zero values at particular compositions. Additionally, a high exciton radiative recombination probability is preserved even in type-II. This allows to design strongly luminescent quantum dots with naturally low fine structure splitting, which could serve as sources of entangled photon pairs for quantum communication.

We have theoretically studied type-I and type-II confinement in InAs quantum dots with GaAs1−ySby capping layer. The character of the confinement can be adjusted by the Sb content. We have found that upon the transition from type-I to type-II confinement the hole wave functions change the topology from a compact shape to a twosegment shape, resulting in the complex changes in the exciton fine structure splitting with zero values at particular compositions. Additionally, a high exciton radiative recombination probability is preserved even in type-II. This allows to design strongly luminescent quantum dots with naturally low fine structure splitting, which could serve as sources of entangled photon pairs for quantum communication.

Quantum Dots; Fine structure; GaAs; Excitons

Quantum Dots; Fine structure; GaAs; Excitons

KŘÁPEK, V.; KLENOVSKÝ, P.; ŠIKOLA, T.

2017

15.01.2016

0587-4246

ACTA PHYSICA POLONICA A

129

1A

Republic of Poland

A66

A69

4

http://przyrbwn.icm.edu.pl/APP/PDF/129/a129z1ap13.pdf