Publication detail

Type-II InAs/GaAsSb/GaAs Quantum Dots as Artificial Quantum Dot Molecules

KLENOVSKÝ, P. KŘÁPEK, V. HUMLÍČEK, J.

Original Title

Type-II InAs/GaAsSb/GaAs Quantum Dots as Artificial Quantum Dot Molecules

Type

journal article in Web of Science

Language

English

Original Abstract

We have studied theoretically the type-II GaAsSb capped InAs quantum dots for two structures differing in the composition of the capping layer, being either (i) constant or (ii) with Sb accumulation above the apex of the dot. We have found that the hole states are segmented and resemble the states in the quantum dot molecules. The two-hole states form singlet and triplet with the splitting energy of 4 µeV/325 µeV for the case (i)/(ii). We have also tested the possibility to tune the splitting by vertically applied magnetic field. Because the predicted tunability range was limited, we propose an approach for its enhancement

Keywords

Quantum dots; Type II, GaAsSb

Authors

KLENOVSKÝ, P.; KŘÁPEK, V.; HUMLÍČEK, J.

Released

15. 1. 2016

ISBN

0587-4246

Periodical

ACTA PHYSICA POLONICA A

Year of study

129

Number

1A

State

Republic of Poland

Pages from

A62

Pages to

A65

Pages count

4