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KLENOVSKÝ, P. KŘÁPEK, V. HUMLÍČEK, J.
Original Title
Type-II InAs/GaAsSb/GaAs Quantum Dots as Artificial Quantum Dot Molecules
Type
journal article in Web of Science
Language
English
Original Abstract
We have studied theoretically the type-II GaAsSb capped InAs quantum dots for two structures differing in the composition of the capping layer, being either (i) constant or (ii) with Sb accumulation above the apex of the dot. We have found that the hole states are segmented and resemble the states in the quantum dot molecules. The two-hole states form singlet and triplet with the splitting energy of 4 µeV/325 µeV for the case (i)/(ii). We have also tested the possibility to tune the splitting by vertically applied magnetic field. Because the predicted tunability range was limited, we propose an approach for its enhancement
Keywords
Quantum dots; Type II, GaAsSb
Authors
KLENOVSKÝ, P.; KŘÁPEK, V.; HUMLÍČEK, J.
Released
15. 1. 2016
ISBN
0587-4246
Periodical
ACTA PHYSICA POLONICA A
Year of study
129
Number
1A
State
Republic of Poland
Pages from
A62
Pages to
A65
Pages count
4