Přístupnostní navigace
E-application
Search Search Close
Publication detail
ŠIKULA, J., PAVELKA, J., SEDLÁKOVÁ, V., TACANO, M., HASHIGUCHI, S., TOITA, M.
Original Title
RTS in submicron MOSFETs and quantum dots
Type
conference paper
Language
English
Original Abstract
In the present paper, emphasis is laid on those RTS showing a capture process, which deviates from the standard Schockley-Read-Hall kinetics. A modified two-step approach is proposed. In this case the charge carrier quantum transitions represent a primary process X(t), which involves two or three quantum states.
Key words in English
RTS noise, Noise Spectral Density, MOSFET, Quantum Dots, Capture Time Constant, Emission Time Constant
Authors
RIV year
2004
Released
1. 1. 2004
Publisher
The Society of Photo-Optical Instrumentation Engineers
Location
United States of America
ISBN
0-8194-5394-3
Book
Proceedings of SPIE - Noise and Information in Nanoelectronics, Sensors, and Standards II
Pages from
64
Pages to
73
Pages count
10
BibTex
@inproceedings{BUT12660, author="Josef {Šikula} and Jan {Pavelka} and Vlasta {Sedláková} and Munecazu {Tacano} and Sumihisa {Hashiguchi} and Masato {Toita}", title="RTS in submicron MOSFETs and quantum dots", booktitle="Proceedings of SPIE - Noise and Information in Nanoelectronics, Sensors, and Standards II", year="2004", pages="10", publisher="The Society of Photo-Optical Instrumentation Engineers", address="United States of America", isbn="0-8194-5394-3" }