Publication detail

RTS in submicron MOSFETs and quantum dots

ŠIKULA, J., PAVELKA, J., SEDLÁKOVÁ, V., TACANO, M., HASHIGUCHI, S., TOITA, M.

Original Title

RTS in submicron MOSFETs and quantum dots

Type

conference paper

Language

English

Original Abstract

In the present paper, emphasis is laid on those RTS showing a capture process, which deviates from the standard Schockley-Read-Hall kinetics. A modified two-step approach is proposed. In this case the charge carrier quantum transitions represent a primary process X(t), which involves two or three quantum states.

Key words in English

RTS noise, Noise Spectral Density, MOSFET, Quantum Dots, Capture Time Constant, Emission Time Constant

Authors

ŠIKULA, J., PAVELKA, J., SEDLÁKOVÁ, V., TACANO, M., HASHIGUCHI, S., TOITA, M.

RIV year

2004

Released

1. 1. 2004

Publisher

The Society of Photo-Optical Instrumentation Engineers

Location

United States of America

ISBN

0-8194-5394-3

Book

Proceedings of SPIE - Noise and Information in Nanoelectronics, Sensors, and Standards II

Pages from

64

Pages to

73

Pages count

10

BibTex

@inproceedings{BUT12660,
  author="Josef {Šikula} and Jan {Pavelka} and Vlasta {Sedláková} and Munecazu {Tacano} and Sumihisa {Hashiguchi} and Masato {Toita}",
  title="RTS in submicron MOSFETs and quantum dots",
  booktitle="Proceedings of SPIE - Noise and Information in Nanoelectronics, Sensors, and Standards II",
  year="2004",
  pages="10",
  publisher="The Society of Photo-Optical Instrumentation Engineers",
  address="United States of America",
  isbn="0-8194-5394-3"
}