Přístupnostní navigace
E-application
Search Search Close
Publication detail
HOFMAN, J. HÁZE, J. SHARP, R. JAKSIC, A. VASOVIC, N.
Original Title
In-situ measurement of total ionising dose induced changes in threshold voltage and temperature coefficients of RADFETs
Type
conference paper
Language
English
Original Abstract
This work presents results of a total ionising dose experiment, during which p-channel RADFETs were irradiated and measured under different gate bias conditions using an in-situ technique. The measurement system allowed threshold voltage shifts and temperature sensitivity of the shift to be measured during irradiation to 60 krad(Si) and the subsequent 55 day period of annealing.
Keywords
RADFET, PMOS dosimeter, temperature effects, temperature coefficient, MTC, ZTC, automated test equipment, test methods
Authors
HOFMAN, J.; HÁZE, J.; SHARP, R.; JAKSIC, A.; VASOVIC, N.
Released
11. 7. 2016
Publisher
IEEE
Location
Portland, US
ISBN
978-1-4673-2730-5
Book
Radiation Effects Data Workshop (REDW), 2016 IEEE
Pages from
1
Pages to
4
Pages count
BibTex
@inproceedings{BUT127872, author="Jiří {Hofman} and Jiří {Háze} and Richard {Sharp} and Aleksandar {Jaksic} and Nikola {Vasovic}", title="In-situ measurement of total ionising dose induced changes in threshold voltage and temperature coefficients of RADFETs", booktitle="Radiation Effects Data Workshop (REDW), 2016 IEEE", year="2016", pages="1--4", publisher="IEEE", address="Portland, US", isbn="978-1-4673-2730-5" }