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BIOLEK, Z. BIOLEK, D. BIOLKOVÁ, V.
Original Title
Hysteresis versus PSM of ideal memristors, memcapacitors, and meminductors
Type
journal article in Web of Science
Language
English
Original Abstract
The classical fingerprint of the ideal memristor with differentiable constitutive relation has recently been extended with a piece of knowledge that the area of the pinched hysteresis loop of a memristor driven by sinusoidal signal with fixed amplitude and increasing frequency disappears with an integer power of the frequency. This fingerprint is extended to the memcapacitor and meminductor, and it is also shown that the way the hysteresis disappears can be determined directly from the behaviour of the parameter versus state map (PSM) of the element in the neighbourhood of the initial operating point.
Keywords
memristors; hysteresis; PSM; ideal memristors; memcapacitors; meminductors; differentiable constitutive relation; pinched hysteresis loop; sinusoidal signal; integer power; fingerprint; parameter versus state map
Authors
BIOLEK, Z.; BIOLEK, D.; BIOLKOVÁ, V.
Released
30. 9. 2016
Publisher
IET, The Institution of Engineering and Technology
Location
London, UK
ISBN
0013-5194
Periodical
Electronics Letters
Year of study
52
Number
20
State
United Kingdom of Great Britain and Northern Ireland
Pages from
1669
Pages to
1670
Pages count
2
URL
https://ietresearch.onlinelibrary.wiley.com/doi/10.1049/el.2016.2138
Full text in the Digital Library
http://hdl.handle.net/11012/203148
BibTex
@article{BUT129543, author="Zdeněk {Biolek} and Dalibor {Biolek} and Viera {Biolková}", title="Hysteresis versus PSM of ideal memristors, memcapacitors, and meminductors", journal="Electronics Letters", year="2016", volume="52", number="20", pages="1669--1670", doi="10.1049/el.2016.2138", issn="0013-5194", url="https://ietresearch.onlinelibrary.wiley.com/doi/10.1049/el.2016.2138" }