Publication detail

In-situ measurement of total ionising dose induced degradation of various commercial voltage references

HOFMAN, J. HÁZE, J. SHARP, R.

Original Title

In-situ measurement of total ionising dose induced degradation of various commercial voltage references

Type

conference paper

Language

English

Original Abstract

This work presents results of a total ionising dose experiment, during which commercial voltage references were irradiated and measured under different bias conditions using an in-situ technique. The measurement system allowed various electrical parameters of the voltage references to be measured during irradiation to 100 krad(Si) and the subsequent 50 day period of annealing. The experimental results obtained allow improved insight into total ionising dose induced degradation of data acquisition systems for space and terrestrial applications. The results show that the selected commercial voltage references can be used for high-precision data acquisition systems on board low-cost missions like CubeSats, which are typically exposed to a limited radiation dose.

Keywords

voltage reference, bandgap, buried Zener diode, data acquisition, A/D converter, TID test, in-situ, temperature coefficient, automated test equipment, test methods

Authors

HOFMAN, J.; HÁZE, J.; SHARP, R.

Released

1. 12. 2016

ISBN

9781457705854

Book

Proccedings, RADECS 2017

Pages from

1

Pages to

4

Pages count

4

URL

https://ieeexplore.ieee.org/document/8093206

BibTex

@inproceedings{BUT130483,
  author="Jiří {Hofman} and Jiří {Háze} and Richard {Sharp}",
  title="In-situ measurement of total ionising dose induced degradation of various commercial voltage references",
  booktitle="Proccedings, RADECS 2017",
  year="2016",
  pages="1--4",
  doi="10.1109/RADECS.2016.8093206",
  isbn="9781457705854",
  url="https://ieeexplore.ieee.org/document/8093206"
}