Publication detail
Surface analysis of epitaxially grown GeSn alloys with Sn contents between 15% and 18%
KORMOŠ, L. KRATZER, M. KOSTECKI, K. OEME, M. ŠIKOLA, T. KASPER, E. SCHULZE, J. TEICHERT, C.
Original Title
Surface analysis of epitaxially grown GeSn alloys with Sn contents between 15% and 18%
Type
journal article in Web of Science
Language
English
Original Abstract
Metastable GeSn layers with rather high Sn content between 15% and 18% grown on Si substrates by molecular beam epitaxy were analyzed for the morphological changes on a surface before and after reaching critical layer parameters (thickness, Sn content, and growth temperature) for surface roughening. Atomic-force microscopy investigations were performed as a function of thickness and separately for varying Sn concentrations in the GeSn layer. Epitaxial growth of metastable, uniform GeSn (15% Sn content) layers is obtained up to a critical thickness which increases from about 80 to above 200 nm by reducing the nominal growth temperature from 160 to 140 °C. Phase separation of the complete layer into tin-rich surface protrusions and a Ge-rich matrix takes place beyond the critical thickness.
Keywords
GeSn;molecular beam epitaxy;roughening;atomic force microscopy (AFM);energy-dispersive X-ray spectroscopy (EDX);alloys
Authors
KORMOŠ, L.; KRATZER, M.; KOSTECKI, K.; OEME, M.; ŠIKOLA, T.; KASPER, E.; SCHULZE, J.; TEICHERT, C.
Released
1. 4. 2017
ISBN
1096-9918
Periodical
Surface and Interface Analysis
Year of study
49
Number
4
State
United Kingdom of Great Britain and Northern Ireland
Pages from
297
Pages to
302
Pages count
6
BibTex
@article{BUT134998,
author="Lukáš {Kormoš} and Markus {Kratzer} and Konrad {Kostecki} and Michael {Oeme} and Tomáš {Šikola} and Erich {Kasper} and Jorg {Schulze} and Christian {Teichert}",
title="Surface analysis of epitaxially grown GeSn alloys with Sn contents between 15% and 18%",
journal="Surface and Interface Analysis",
year="2017",
volume="49",
number="4",
pages="297--302",
doi="10.1002/sia.6134",
issn="1096-9918"
}