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KUPAROWITZ, M. KUPAROWITZ, T.
Original Title
Tantalum Capacitor as a MIS Structure: Transport Characteristic Temperature Dependencies
Type
conference paper
Language
English
Original Abstract
Temperature dependencies of a leakage current in normal mode are explained on the basis of a model, in which the solid state tantalum capacitor is considered as a metal-insulator-semiconductor (MIS) heterostructure. The measurement was performed in temperature range from 105 to 155°C. Ohmic conductivity increases exponentially with increasing temperature with activation energy 0.94 eV. Tunneling voltage parameter and tunneling energy barrier decreases with increasing temperature, reaching values 0.45 to 0.26 eV.
Keywords
antalum capacitor, MIS structure, I-V characteristics, tunneling energy barrier, activation energy
Authors
KUPAROWITZ, M.; KUPAROWITZ, T.
Released
27. 4. 2017
Publisher
Vysoké učení technické v Brně, Fakulta elektrotechniky a komunikačních technologií
Location
Brno
ISBN
9788021454965
Book
EEICT proceedings of the 23rd conference
Pages from
645
Pages to
649
Pages count
5
URL
http://www.utee.feec.vutbr.cz/eeict/2017/EEICT%202017-sborn%C3%ADk-komplet.pdf
BibTex
@inproceedings{BUT135410, author="Martin {Velísek} and Tomáš {Kuparowitz}", title="Tantalum Capacitor as a MIS Structure: Transport Characteristic Temperature Dependencies", booktitle="EEICT proceedings of the 23rd conference", year="2017", pages="645--649", publisher="Vysoké učení technické v Brně, Fakulta elektrotechniky a komunikačních technologií", address="Brno", isbn="9788021454965", url="http://www.utee.feec.vutbr.cz/eeict/2017/EEICT%202017-sborn%C3%ADk-komplet.pdf" }