Publication detail

PRESENT STATE OF GAN TECHNOLOGY IN POWER ELECTRONICS

ŠÍR, M.

Original Title

PRESENT STATE OF GAN TECHNOLOGY IN POWER ELECTRONICS

Type

conference paper

Language

English

Original Abstract

Paper presents a general overview of nowadays Gallium Nitride power transistor technology and shows the existing components with their limits from different manufacturers currently available on the market. Introduction to GaN depletion mode, enhancement mode and cascode transistor structure with their function explanation is included.

Keywords

GaN, cascode, depletion mode, enhancement mode

Authors

ŠÍR, M.

Released

27. 4. 2017

Publisher

Vysoké učení technické v Brně, Fakulta elektrotechniky a komunikačních

Location

Brno

ISBN

978-80-214-5496-5

Book

Proceedings of the 23nd Conference STUDENT EEICT 2017

Edition number

první

Pages from

563

Pages to

567

Pages count

5

URL

http://eeict.feec.vutbr.cz/

BibTex

@inproceedings{BUT136463,
  author="Michal {Šír}",
  title="PRESENT STATE OF GAN TECHNOLOGY IN POWER ELECTRONICS",
  booktitle="Proceedings of the 23nd Conference STUDENT EEICT 2017",
  year="2017",
  number="první",
  pages="563--567",
  publisher="Vysoké učení technické v Brně, Fakulta elektrotechniky a komunikačních",
  address="Brno",
  isbn="978-80-214-5496-5",
  url="http://eeict.feec.vutbr.cz/"
}