Publication detail

Scanning near-field optical microscopy and its application in semiconductor investigation

TOMÁNEK, P., BENEŠOVÁ, M., OTEVŘELOVÁ, D., DOBIS, P.

Original Title

Scanning near-field optical microscopy and its application in semiconductor investigation

Type

conference paper

Language

English

Original Abstract

Scanning near-field optical microscopy (SNOM) opened a new era in optical microscopy, bringing the spatial resolution at the 50-100 nm level using visible or near infrared light. This resolution is well below the diffraction limit of light and allows to overcome the restrictions of classical (far-field) optical techniques. With the development of small-aperture optical fiber probes or apertureless probes, sub-wavelength resolutions were achieved. The single capability of SNOM to simultaneously measure surface topography and local optical and electronic properties, thereby eliminating the need to perform cross correlation analysis on results obtained using different techniques, is particularly useful in this area. Several applications to the characterization of semiconductor, where SNOM techniques make possible a direct access to nondestructive, non-contact spectroscopic investigation of the structures, will be discussed. The advantages and drawbacks of SNOM in each application will be highlighted. Throughout the review, weight is placed on how SNOM goes together with existing material characterization techniques, as well as how quantitative results can be obtained from SNOM measurements.

Keywords

scanning near-field optical microscopy, photoluminecsence, semiconductor, locally induced photocurrent

Authors

TOMÁNEK, P., BENEŠOVÁ, M., OTEVŘELOVÁ, D., DOBIS, P.

RIV year

2004

Released

2. 5. 2004

Publisher

Institute for Physics of Microsctructures RAS

Location

Nizhny Novgorod

Pages from

108

Pages to

111

Pages count

4

BibTex

@inproceedings{BUT13775,
  author="Pavel {Tománek} and Markéta {Benešová} and Dana {Otevřelová} and Pavel {Dobis}",
  title="Scanning near-field optical microscopy and its application in semiconductor investigation",
  booktitle="Scanning probe microscopy 2004",
  year="2004",
  pages="108--111",
  publisher="Institute for Physics of Microsctructures RAS",
  address="Nizhny Novgorod"
}