Publication detail

Multifractal characterization of epitaxial silicon carbide on silicon

TALU, S. STACH, S. RAMAZANOV, S. SOBOLA, D. RAMAZANOV, G.

Original Title

Multifractal characterization of epitaxial silicon carbide on silicon

Type

journal article in Web of Science

Language

English

Original Abstract

The purpose of this study was to investigate the topography of silicon carbide films at two steps of growth. Thetopography was measured by atomic force microscopy. The data were processed for extraction of information about surface condition and changes in topography during the films growth. Multifractal geometry was used to characterize three-dimensional micro- and nano-size features of the surface. X-ray measurements and Raman spectroscopy were performed for analysis of the films composition. Two steps of morphology evolution during the growth were analyzed by multifractal analysis. The results contribute to the fabrication of silicon carbide large area substrates for micro- and nanoelectronic applications.

Keywords

surface roughness; multifractal analysis; atomic force microscopy; silicon carbide; film growth

Authors

TALU, S.; STACH, S.; RAMAZANOV, S.; SOBOLA, D.; RAMAZANOV, G.

Released

11. 9. 2017

Publisher

DE GRUYTER OPEN

Location

POLAND

ISBN

2083-134X

Periodical

MATERIALS SCIENCE-POLAND

Number

3

State

Republic of Poland

Pages from

1

Pages to

9

Pages count

9

BibTex

@article{BUT138821,
  author="Stefan {Talu} and Sebastian {Stach} and Shihgasan {Ramazanov} and Dinara {Sobola} and Gusejn {Ramazanov}",
  title="Multifractal characterization of epitaxial silicon carbide on silicon",
  journal="MATERIALS SCIENCE-POLAND",
  year="2017",
  number="3",
  pages="1--9",
  doi="10.1515/msp-2017-0049",
  issn="2083-134X"
}