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SEDLÁKOVÁ, V. ŠIKULA, J. KUPAROWITZ, M.
Original Title
Temperature Dependence of Leakage Current Degradation of Tantalum Capacitors at High Electric Field
Type
conference paper
Language
English
Original Abstract
Tantalum capacitors have been the preferred capacitor technology in long lifetime electronic devices thanks to the stability of its electric parameters and high reliability. However, long time application of elevated temperature and high electric field can result in capacitor leakage current increase in time. In this paper the effect of ions drift and diffusion at different temperatures on DCL degradation is analysed. DCL vs. time characteristics at temperatures from 65C to 155C were studied in order to determine the parameters of leakage current ageing. Results for four technologies are presented and it is shown that capacitor technology has crucial impact on DCL vs. time characteristics. These experiments are used to determine the background temperature at which DCL degradation starts with respect to the value of electric field. There exists background temperature under which the thermal excitation is not sufficient for give rise to the ions movement. This background temperature is higher than 105C for technology IS4 while for technology IS3 this temperature is 65C only.
Keywords
tantalum capacitor; leakage current; high temparature degradation; high electric field degradation
Authors
SEDLÁKOVÁ, V.; ŠIKULA, J.; KUPAROWITZ, M.
Released
11. 9. 2017
Publisher
Ing. Vladislav Pokorný - LITERA BRNO, Tábor 43a, 612 00 Brno
Location
Česká republika
ISBN
978-80-905768-8-9
Book
PCSN 2017 Proceedings
Pages from
128
Pages to
136
Pages count
9
BibTex
@inproceedings{BUT139512, author="Vlasta {Sedláková} and Josef {Šikula} and Martin {Velísek}", title="Temperature Dependence of Leakage Current Degradation of Tantalum Capacitors at High Electric Field", booktitle="PCSN 2017 Proceedings", year="2017", pages="128--136", publisher="Ing. Vladislav Pokorný - LITERA BRNO, Tábor 43a, 612 00 Brno", address="Česká republika", isbn="978-80-905768-8-9" }