Publication detail

Preparation of [001] Oriented Titanium Thin Film for MEMS Applications by Kaufman Ion-beam Source

GABLECH, I. CAHA, O. SVATOŠ, V. PRÁŠEK, J. PEKÁREK, J. NEUŽIL, P. ŠIKOLA, T.

Original Title

Preparation of [001] Oriented Titanium Thin Film for MEMS Applications by Kaufman Ion-beam Source

Type

conference paper

Language

English

Original Abstract

We propose the sputtering deposition providing titanium thin films with controlled properties such as preferential crystallography and residual stress using Kaufman ion-beam source. The titanium thin films with thickness of ≈ 80 nm were deposited on [001] Si wafer covered by SiO2 deposited by plasma-enhanced chemical vapor deposition. To achieve the required crystallography and stress properties, we investigated the different beam voltage of Kaufman ion-beam source and controlled the substrate temperature during deposition using a built-in heater. We used two X-ray diffraction methods to determine the planes parallel to the sample surface and residual stress. We also measured the current-voltage curves to determine the resistivity (ρ) and the thermal coefficient of resistivity (α) of titanium thin films at different substrate temperatures using 4-probe measurement setup. We showed that it is possible to prepare stress-free titanium thin films with pure [001] orientation at the lowest beam voltage of 200 V and substrate temperature of ≈ 273 °C. The corresponding lattice parameters a0 and c0 were (2.954 ± 0.003) Å and (4.695 ± 0.001) Å, respectively. Electrical parameters of this sample as ρ and α were (9.2 ± 0.1)∙10-7 Ω∙m and (2.6 ± 0.2)∙10-3 K-1, respectively. We found out that these layers are well suitable for micro-electro-mechanical systems where the pure [001] orientation, no residual stress and low ρ and high α are essential. We found that ρ and α are dependent on each other. The ρ value was ≈ 2× higher than the bulk material value, which is an excellent result for a thin film with the thickness of ≈ 80 nm.

Keywords

titanium thin film, [001] orientation, stress-free, thermal coefficient of resistivity, resistivity

Authors

GABLECH, I.; CAHA, O.; SVATOŠ, V.; PRÁŠEK, J.; PEKÁREK, J.; NEUŽIL, P.; ŠIKOLA, T.

Released

18. 10. 2018

Publisher

Tanger

Location

Ostrava

ISBN

978-80-87294-59-8

Book

Proceedings of 9 th International conference Nanocon 2017

Edition

1

Edition number

1

Pages from

117

Pages to

122

Pages count

6

URL

https://nanocon2018.tanger.cz/files/uploads/01/NANOCON2017_Proceedings_content.pdf

BibTex

@inproceedings{BUT140030,
  author="Imrich {Gablech} and Ondřej {Caha} and Vojtěch {Svatoš} and Jan {Prášek} and Jan {Pekárek} and Pavel {Neužil} and Tomáš {Šikola}",
  title="Preparation of [001] Oriented Titanium Thin Film for MEMS Applications by Kaufman Ion-beam Source",
  booktitle="Proceedings of 9 th International conference Nanocon 2017",
  year="2018",
  series="1",
  number="1",
  pages="117--122",
  publisher="Tanger",
  address="Ostrava",
  isbn="978-80-87294-59-8",
  url="https://nanocon2018.tanger.cz/files/uploads/01/NANOCON2017_Proceedings_content.pdf"
}