Přístupnostní navigace
E-application
Search Search Close
Publication detail
BIOLEK, Z. BIOLEK, D. BIOLKOVÁ, V. KOLKA, Z. ASCOLI, A. TETZLAFF, R.
Original Title
Analysis of memristors with nonlinear memristance versus state maps
Type
journal article in Web of Science
Language
English
Original Abstract
According to the axiomatic definition of the memristor from 1971, its properties are unambiguously determined by the memristance vs. charge (or flux) map. The original model of the “HP memristor“ introduces this map via a linear function, that represents this memristor as a variable resistor whose resistance is linearly dependent on the amount of charge flowing through. However, some analog applications require nonlinear, frequently exponential or logarithmic dependence of the resistance on an external controlling variable. The memristor with nonlinear memristance vs. charge map is analyzed in the paper. The results are specified for the exponential type of this nonlinearity, which may be useful for future applications. Analytic formulae of the area of the pinched hysteresis loop of such a memristor are derived for harmonic excitation. It is also shown that the current flowing through such a memristor, which is driven by a voltage of arbitrary waveform, conforms to the Abel differential equation, and its closed-form solution is found.
Keywords
Memristor; Hysteresis; Exponential; PSM; Constitutive Relation; Pinched Hysteresis Loop
Authors
BIOLEK, Z.; BIOLEK, D.; BIOLKOVÁ, V.; KOLKA, Z.; ASCOLI, A.; TETZLAFF, R.
Released
25. 1. 2017
Publisher
John Wiley & Sons, Inc.
Location
USA
ISBN
1097-007X
Periodical
International Journal of Circuit Theory and Applications
Year of study
2017
Number
1
State
United Kingdom of Great Britain and Northern Ireland
Pages from
1814
Pages to
1832
Pages count
19
URL
http://dx.doi.org/10.1002/cta.2314
BibTex
@article{BUT141088, author="Zdeněk {Biolek} and Dalibor {Biolek} and Viera {Biolková} and Zdeněk {Kolka} and Alon {Ascoli} and Ronald {Tetzlaff}", title="Analysis of memristors with nonlinear memristance versus state maps", journal="International Journal of Circuit Theory and Applications", year="2017", volume="2017", number="1", pages="1814--1832", doi="10.1002/cta.2314", issn="1097-007X", url="http://dx.doi.org/10.1002/cta.2314" }