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KADLČÍK, L. HORSKÝ, P.
Original Title
A CMOS Follower-Type Voltage Regulator With a Distributed-Element Fractional-Order Control
Type
journal article in Scopus
Language
English
Original Abstract
This paper presents an application of a fractional-order control in an on-chip follower-type 1.8 V/100 mA voltage regulator to achieve a good stability with any load capacitance. The controller approximates an integrator with the fractional order of 0.5, whose phase lag is not more than 45°. The fractional order is set by the fractional-order impedance of the resistive p-type MOS capacitor (R-PMOScap). With an n-type MOS source follower stage adding the phase lag of at most 90°, the remaining phase margin is always at least 45°. The R-PMOScap is a novel integrated distributed-element RC network, realized as a resistive polysilicon strip on a gate oxide, and is compatible with an analog CMOS process. The voltage regulator has been manufactured in a 350-nm CMOS process and occupies a small chip area of 0.038 mm^2. It operates in a harsh automotive environment with a temperature from -50 °C to 200 °C and shows a tight DC regulation, while being stable over the full range of the load current (from 0 to 100 mA) and with any load capacitance (allowing to use none or any external capacitor).
Keywords
distributed-element RC circuit; fractional-order control; fractional-order integrator; loop stability; R-PMOScap; source follower; voltage regulator
Authors
KADLČÍK, L.; HORSKÝ, P.
Released
9. 3. 2018
Publisher
IEEE Circuits and Systems Society
Location
Spojené státy americké
ISBN
1549-8328
Periodical
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS
Year of study
65
Number
9
State
United States of America
Pages from
2753
Pages to
2763
Pages count
11
URL
http://ieeexplore.ieee.org/document/8310958
BibTex
@article{BUT146820, author="Libor {Kadlčík} and Pavel {Horský}", title="A CMOS Follower-Type Voltage Regulator With a Distributed-Element Fractional-Order Control", journal="IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS", year="2018", volume="65", number="9", pages="2753--2763", doi="10.1109/TCSI.2018.2808879", issn="1549-8328", url="http://ieeexplore.ieee.org/document/8310958" }