Publication detail

Atomic Layer Deposition of AlN Using Tris(diethylamido)aluminum with Ammonia or Hydrazine

Abdulagatov A.I., Ramazanov Sh.M., Dallaev R.S., Murliev E.K., Palchaev D.K., Rabadanov M.Kh., Abdulagatov I.M.

Original Title

Atomic Layer Deposition of AlN Using Tris(diethylamido)aluminum with Ammonia or Hydrazine

Type

journal article in Scopus

Language

English

Original Abstract

In this work aluminum nitride (AlN) thin films were deposited by atomic layer deposition (ALD) technique using tris(diethylamido)aluminum (III) (TDEAA) with ammonia (NH3) or hydrazine (N2H4). Two different nitrogen sources were used to conduct comparative study AlN ALD using TDEAA/NH3 and TDEAA/N2H4. For these two systems, deposition was carried out at rector temperatures between 150 to 290 °C. In situ quartz crystal microbalance (QCM) measurements conducted between 160 to 225 °C suggested that surface reactions between TDEAA and NH3 or N2H¬4 are self-limiting. At all examined temperatures hydrazine needed smaller doses to reach saturation than ammonia. Ex situ thin film analysis techniques such as x-ray reflectivity (XRR), x-ray photoelectron spectroscopy (XPS), and forward recoil spectroscopy (FReS) were used to examine resulted films. The optimal deposition temperature for both systems were found to be between 200 to 225 °C where highest films density and rate of growth was found. At the same temperature conditions, films deposited using N2H4 exhibited higher films density and higher oxidation resistant, compare to the films deposited using NH3. Elemental analysis of the balk of the film deposited at 225 °C with N2H4 showed a small amount of carbon ~ 1.8 at. % and ~ 3.9 at. % of oxygen. FReS analysis of AlN films deposited with NH3 and N2H4 indicated presence of ~ 25 at. % of hydrogen. This hydrogen believe to be present in the deposited films as unreacted methyl, amine (-NH) and/or amide (-NH2) groups which could be potentially removed by annealing. Overall, N2H4 showed more favorable surface chemistry for AlN ALD compare to NH3 film with higher density and lower sensitivity to oxidation.

Keywords

Aluminum nitride, atomic layer deposition, hydrazine, ammonia

Authors

Abdulagatov A.I., Ramazanov Sh.M., Dallaev R.S., Murliev E.K., Palchaev D.K., Rabadanov M.Kh., Abdulagatov I.M.

Released

8. 4. 2018

ISBN

1063-7397

Periodical

Russian Microelectronics

Year of study

47

Number

2

State

Russian Federation

Pages from

118

Pages to

130

Pages count

13

BibTex

@article{BUT146844,
  author="Rashid {Dallaev}",
  title="Atomic Layer Deposition of AlN Using Tris(diethylamido)aluminum with Ammonia or Hydrazine",
  journal="Russian Microelectronics",
  year="2018",
  volume="47",
  number="2",
  pages="118--130",
  doi="10.1134/S1063739718020026",
  issn="1063-7397"
}