Publication detail

Dark J–V Characteristics Model of Chalcopyrite-Based Solar Cells

ŠKVARENINA, Ľ.

Original Title

Dark J–V Characteristics Model of Chalcopyrite-Based Solar Cells

Type

conference paper

Language

English

Original Abstract

An equivalent circuit model of the current parasitic pathways is proposed to describe a behaviour of dark current density–voltage characteristics of chalcopyrite-based solar cells in order to understand a shunting behaviour between the ZnO:Al/i-ZnO/CdS/Cu(In;Ga)Se2/MoSe2/Mo/Ti/TiN layers. The model fitting with a parameter extraction is evaluated for the sample before and after an appearance of a permanent breakdown to prove an accurate response of the proposed model to an ohmic and non-ohmic component shift.

Keywords

dark J–V characteristics, parasitic current pathways, heterojunction, CIGS, solar cell, thin-film, equivalent electrical model, parameters extraction

Authors

ŠKVARENINA, Ľ.

Released

26. 4. 2018

Publisher

Vysoké učení technické v Brně, Fakulta elektrotechniky a komunikačních technologií

Location

Brno

ISBN

978-80-214-5614-3

Book

Proceedings of the 24th Conference STUDENT EEICT 2018

Edition

1.

Pages from

528

Pages to

532

Pages count

5

BibTex

@inproceedings{BUT147206,
  author="Ľubomír {Škvarenina}",
  title="Dark J–V Characteristics Model of Chalcopyrite-Based Solar Cells",
  booktitle="Proceedings of the 24th Conference STUDENT EEICT 2018",
  year="2018",
  series="1.",
  pages="528--532",
  publisher="Vysoké učení technické v Brně, Fakulta elektrotechniky a komunikačních technologií",
  address="Brno",
  isbn="978-80-214-5614-3"
}