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PAPEŽ, N.
Original Title
Morphological structure of solar cells based on silicon and gallium arsenide after ion etching
Type
conference paper
Language
English
Original Abstract
Study deals with the investigation of the surface after ion etching on two types of solar cells -- based on widely available polycrystalline silicon and on durable gallium arsenide for use in more demanding environments. Solar cell morphology was compared using an electron microscope together with an Energy Dispersive X-ray detector to show distribution ratios of elements. Atomic force microscopy was used to accurately describe the heights and roughness structure. Raman spectroscopy to study of vibrational properties and the stress investigations.
Keywords
RIE, GaAs, Si, ion bombardment, EDX, SEM, AFM
Authors
Released
26. 4. 2018
Location
Brno
ISBN
978-80-214-5614-3
Book
Proceedings of the 24th Conference STUDENT EEICT 2018
Edition number
1
Pages from
513
Pages to
517
Pages count
5
URL
http://www.feec.vutbr.cz/EEICT/archiv/sborniky/EEICT_2018_sbornik.pdf
BibTex
@inproceedings{BUT147353, author="Nikola {Papež}", title="Morphological structure of solar cells based on silicon and gallium arsenide after ion etching", booktitle="Proceedings of the 24th Conference STUDENT EEICT 2018", year="2018", number="1", pages="513--517", address="Brno", isbn="978-80-214-5614-3", url="http://www.feec.vutbr.cz/EEICT/archiv/sborniky/EEICT_2018_sbornik.pdf" }