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PETRŽELA, J.
Original Title
Multi-state memory cell with resonant tunelling diodes: circuit tool for chaos generation
Type
conference paper
Language
English
Original Abstract
This paper presents fundamental circuit of a multi-valued static memory cell working as a natural source of chaos. Standard situation is that a pair of the resonant tunneling diodes is connected in series. In our case, three changes have been made to enrich possible dynamical performance of analyzed memory. First change is that one diode is linearized to simplify describing mathematical model and to ease realization of equivalent circuit. Second modification lies in the ampere-voltage curve of nonlinear diode; it will be scalar odd-symmetrical piecewise linear function with positive or negative slope in the inner segment. In addition, negative value of parasitic capacitance of some diode is admitted. Numerical analysis proves that this generalized memory exhibits several strange attractors with the different geometrical shapes. Experimental measurements demonstrate that observed chaotic attractors are neither numerical artifact nor transient behavior. Structural stability of discovered chaotic attractor is documented by gallery of oscilloscope screenshots. Connection between system operation as memory and chaotic oscillator is discussed.
Keywords
chaos; multiple valued; nonlinear dynamics; piece-wise linear; static memory; strange attractor
Authors
Released
19. 4. 2018
Publisher
CVUT
Location
Praha
ISBN
978-1-5386-2485-2
Book
Proceedings of 28th International Conference Radioelektronika 2018
Pages from
1
Pages to
5
Pages count
URL
https://www.marew.cz/
BibTex
@inproceedings{BUT148210, author="Jiří {Petržela}", title="Multi-state memory cell with resonant tunelling diodes: circuit tool for chaos generation", booktitle="Proceedings of 28th International Conference Radioelektronika 2018", year="2018", pages="1--5", publisher="CVUT", address="Praha", doi="10.1109/RADIOELEK.2018.8376360", isbn="978-1-5386-2485-2", url="https://www.marew.cz/" }