Publication detail
0.3-V bulk-driven nanopower OTA-C integrator in 0.18 µm CMOS
KHATEB, F. KULEJ, T. AKBARI, M. ŠTEFFAN, P.
Original Title
0.3-V bulk-driven nanopower OTA-C integrator in 0.18 µm CMOS
Type
journal article in Web of Science
Language
English
Original Abstract
This short paper presents the experimental results for a 0.3-V fully-differential OTA-C integrator, implemented in a standard n-well 0.18 µm CMOS technology from TSMC with chip area 350 µm x 100 µm. The integrator consists of an adaptively biased bulk-driven (BD) linear operational transconductance amplifier (OTA) and a low-distortion common-mode feedback circuit (CMFB). The integrator can operate with supply voltages ranging from 0.3 to 0.5 V. For a 0.3-V version its cutoff frequency can be tuned from 50 to 334 Hz for a 220 pF load capacitance. For a nominal biasing current its power consumption is 50 nW and the dynamic range is 75 dB.
Keywords
Bulk-driven, OTA-C integrator, Low-voltage, Low-power, Sub 0.5-V circuits
Authors
KHATEB, F.; KULEJ, T.; AKBARI, M.; ŠTEFFAN, P.
Released
8. 2. 2019
Publisher
SPRINGER BIRKHAUSER
Location
USA
ISBN
0278-081X
Periodical
CIRCUITS SYSTEMS AND SIGNAL PROCESSING
Year of study
38
Number
3, IF: 1.922
State
United States of America
Pages from
1333
Pages to
1341
Pages count
9
URL
BibTex
@article{BUT148734,
author="Fabian {Khateb} and Tomasz {Kulej} and Meysam {Akbari} and Pavel {Šteffan}",
title="0.3-V bulk-driven nanopower OTA-C integrator in 0.18 µm CMOS",
journal="CIRCUITS SYSTEMS AND SIGNAL PROCESSING",
year="2019",
volume="38",
number="3, IF: 1.922",
pages="1333--1341",
doi="10.1007/s00034-018-0901-x",
issn="0278-081X",
url="http://dx.doi.org/10.1007/s00034-018-0901-x"
}