Publication detail

0.3-V bulk-driven nanopower OTA-C integrator in 0.18 µm CMOS

KHATEB, F. KULEJ, T. AKBARI, M. ŠTEFFAN, P.

Original Title

0.3-V bulk-driven nanopower OTA-C integrator in 0.18 µm CMOS

Type

journal article in Web of Science

Language

English

Original Abstract

This short paper presents the experimental results for a 0.3-V fully-differential OTA-C integrator, implemented in a standard n-well 0.18 µm CMOS technology from TSMC with chip area 350 µm x 100 µm. The integrator consists of an adaptively biased bulk-driven (BD) linear operational transconductance amplifier (OTA) and a low-distortion common-mode feedback circuit (CMFB). The integrator can operate with supply voltages ranging from 0.3 to 0.5 V. For a 0.3-V version its cutoff frequency can be tuned from 50 to 334 Hz for a 220 pF load capacitance. For a nominal biasing current its power consumption is 50 nW and the dynamic range is 75 dB.

Keywords

Bulk-driven, OTA-C integrator, Low-voltage, Low-power, Sub 0.5-V circuits

Authors

KHATEB, F.; KULEJ, T.; AKBARI, M.; ŠTEFFAN, P.

Released

8. 2. 2019

Publisher

SPRINGER BIRKHAUSER

Location

USA

ISBN

0278-081X

Periodical

CIRCUITS SYSTEMS AND SIGNAL PROCESSING

Year of study

38

Number

3, IF: 1.922

State

United States of America

Pages from

1333

Pages to

1341

Pages count

9

URL

BibTex

@article{BUT148734,
  author="Fabian {Khateb} and Tomasz {Kulej} and Meysam {Akbari} and Pavel {Šteffan}",
  title="0.3-V bulk-driven nanopower OTA-C integrator in 0.18 µm CMOS",
  journal="CIRCUITS SYSTEMS AND SIGNAL PROCESSING",
  year="2019",
  volume="38",
  number="3, IF: 1.922",
  pages="1333--1341",
  doi="10.1007/s00034-018-0901-x",
  issn="0278-081X",
  url="http://dx.doi.org/10.1007/s00034-018-0901-x"
}