Publication detail

How Xe and Ga FIB differ in inducing lateral damage on TEM samples

Tomáš Hrnčíř, Jozef Vincenc Oboňa, Martin Petrenec, Jan Michalička, Christian Lang

Original Title

How Xe and Ga FIB differ in inducing lateral damage on TEM samples

Type

conference paper

Language

English

Original Abstract

Reducing FIB induced damage on TEM samples is very important in order to preserve the sample structure, especially on modern semiconductor devices. We have compared the damage caused by Ga ion beam to our measurements of the damage caused by Xe ion beam and came to the conclusion that Xe ion beam induced damage is significantly lower at 30 keV beam energy. This has been proven by several independent analytical methods. Our results show that TEM sample preparation by Xe ion beam causes less amorphous damage and increase the quality of the lamella and in many cases it will allow to prepare the lamella by finishing it even at 30 keV, without the final cleaning step at the low beam energy. Final polishing step by Xe beam at beam energy 3 keV further reduces the amorphous layer, but the difference against Ga beam is not so significant like at 30 keV.

Keywords

Focused ion beam TEM samples Beam induced damage Silicon

Authors

Tomáš Hrnčíř, Jozef Vincenc Oboňa, Martin Petrenec, Jan Michalička, Christian Lang

Released

24. 12. 2015

ISBN

978-1-62708-102-3

Book

ISTFA 2015: CONFERENCE PROCEEDINGS FROM THE 41ST INTERNATIONAL SYMPOSIUM FOR TESTING AND FAILURE ANALYSIS

Pages from

65

Pages to

70

Pages count

6

URL

http://apps.webofknowledge.com/full_record.do?product=WOS&search_mode=GeneralSearch&qid=23&SID=D2h3EEBDI1RIlRaa1Hb&page=1&doc=1

BibTex

@inproceedings{BUT149581,
  author="Jan {Michalička}",
  title="How Xe and Ga FIB differ in inducing lateral damage on TEM samples",
  booktitle="ISTFA 2015: CONFERENCE PROCEEDINGS FROM THE 41ST INTERNATIONAL SYMPOSIUM FOR TESTING AND FAILURE ANALYSIS",
  year="2015",
  pages="65--70",
  isbn="978-1-62708-102-3",
  url="http://apps.webofknowledge.com/full_record.do?product=WOS&search_mode=GeneralSearch&qid=23&SID=D2h3EEBDI1RIlRaa1Hb&page=1&doc=1"
}