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HYLSKÝ, J. STRACHALA, D. ČUDEK, P. VANĚK, J.
Original Title
Protection Against PID Degradation at Photovoltaic Cell Level
Type
conference paper
Language
English
Original Abstract
Nowadays, we find many scientific papers dealing with the potential induced degradation, in which authors attempt to achieve PID resistive photovoltaic cells. This work deals with the electrical properties of the newly created P-type photovoltaic cell. The IV-characteristics and external quantum efficiency of the newly created and reference samples are compared. To verify the resistivity of the newly created photovoltaic cell against PID, both samples were artificially degraded
Keywords
Potential Induced Degradation
Authors
HYLSKÝ, J.; STRACHALA, D.; ČUDEK, P.; VANĚK, J.
Released
9. 11. 2018
Publisher
ECS Transaction
Location
Brno
ISBN
978-1-60768-864-8
Book
ECS Transactions
Edition
87
Edition number
1
1938-5862
Periodical
Year of study
Number
State
United States of America
Pages from
221
Pages to
225
Pages count
5
URL
https://iopscience.iop.org/article/10.1149/08701.0221ecst/pdf
BibTex
@inproceedings{BUT150479, author="Josef {Hylský} and Dávid {Strachala} and Pavel {Čudek} and Jiří {Vaněk}", title="Protection Against PID Degradation at Photovoltaic Cell Level", booktitle="ECS Transactions", year="2018", series="87", journal="ECS Transactions", volume="87", number="1", pages="221--225", publisher="ECS Transaction", address="Brno", doi="10.1149/08701.0221ecst", isbn="978-1-60768-864-8", issn="1938-5862", url="https://iopscience.iop.org/article/10.1149/08701.0221ecst/pdf" }