Publication detail

Multiple-input bulk-driven MOS transistor for low-voltage low-frequency applications

KHATEB, F. KULEJ, T. KUMNGERN, M. PSYCHALINOS, C.

Original Title

Multiple-input bulk-driven MOS transistor for low-voltage low-frequency applications

Type

journal article in Web of Science

Language

English

Original Abstract

This brief presents the principle and the first experimental results of the multiple-input bulk-driven (MIBD) MOS transistor (MOST) suitable for extremely low-voltage (LV) low-power (LP) integrated circuits. The MIBD MOST offers significant reduction in circuit complexity, power consumption and extension of the input common-mode range (ICMR). To confirm the benefits of the MIBD MOST, a differential difference amplifier (DDA) with very simple CMOS topology has been designed and fabricated in a standard n-well 0.18 µm CMOS process from TSMC with total chip area 226 µm x 78 µm. The DDA is supplied with 0.5 V and consume only 1.23 µW while the ICMR is rail-to-rail. The measured open-loop dc gain is 62 dB, the gain bandwidth product is 56.4 kHz and the total harmonic distortion is 0.2 % @ 1 kHz for 400 mV peak-to-peak input sine-wave.

Keywords

Bulk-driven technique; Differential difference amplifier; Low-voltage low-power CMOS.

Authors

KHATEB, F.; KULEJ, T.; KUMNGERN, M.; PSYCHALINOS, C.

Released

25. 4. 2019

Publisher

SPRINGER BIRKHAUSER

Location

USA

ISBN

0278-081X

Periodical

CIRCUITS SYSTEMS AND SIGNAL PROCESSING

Year of study

38

Number

6, IF: 1.922

State

United States of America

Pages from

2829

Pages to

2845

Pages count

17

URL

http://dx.doi.org/10.1007/s00034-018-0999-x

BibTex

@article{BUT151344,
  author="Fabian {Khateb} and Tomasz {Kulej} and Montree {Kumngern} and Costas {Psychalinos}",
  title="Multiple-input bulk-driven MOS transistor for low-voltage low-frequency applications
",
  journal="CIRCUITS SYSTEMS AND SIGNAL PROCESSING",
  year="2019",
  volume="38",
  number="6, IF: 1.922",
  pages="2829--2845",
  doi="10.1007/s00034-018-0999-x",
  issn="0278-081X",
  url="http://dx.doi.org/10.1007/s00034-018-0999-x"
}