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GRMELA, L. KALA, J. TOMÁNEK, P.
Original Title
Optical near-field investigations on GaAs/AlxGa1-XAs quantum dots
Type
conference paper
Language
English
Original Abstract
The generation of the mid-infrared laser light in the tunnel-bounded quantum wells is observed. This phenomenon is linked together with inter-subband transitions of electrons during the intraband optical pumping. The inversion of population quantum wells is also possible during the interband optical or current pumping. This process is more convenient for practical applications. To investigate the optical properties of tunnel-bounded quantum-wells GaAs/AlxGa1-xAs with intersubband transitions of electrons the time and spatial resolved scanning near-field optical microscope is used.
Keywords
near-field optics, semiconductor structure, quantum well, absorption, time delay
Authors
GRMELA, L.; KALA, J.; TOMÁNEK, P.
RIV year
2005
Released
9. 6. 2005
Publisher
Zeithamlová Milena, Ing. - Agentura Action M
Location
Prague
ISBN
80-86742-08-3
Book
Photonics Prague 2005
Pages from
163
Pages to
164
Pages count
2
BibTex
@inproceedings{BUT15230, author="Lubomír {Grmela} and Jaroslav {Kala} and Pavel {Tománek}", title="Optical near-field investigations on GaAs/AlxGa1-XAs quantum dots", booktitle="Photonics Prague 2005", year="2005", pages="163--164", publisher="Zeithamlová Milena, Ing. - Agentura Action M", address="Prague", isbn="80-86742-08-3" }