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GAJDOŠ, A. ŠKARVADA, P. MACKŮ, R. PAPEŽ, N. ŠKVARENINA, Ľ. SOBOLA, D.
Original Title
Isolation and optoelectronic characterization of Si solar cells microstructure defects
Type
journal article in Scopus
Language
English
Original Abstract
This research article presents results of silicon solar cell defects optoelectronic characterization based on several experimental methods. These microstructure defects have their origin mainly in the production process, but also can be caused by mechanical stress. However, some defect related spots emit light when the cell is reverse biased. Therefore, electroluminescence (EL) method is used for macroscopic localization and scanning near-field optical microscopy (SNOM) combined with photomultiplier tube in order to scan topography of defective area in microscale. Moreover, elemental analysis of the defects related spots provided by energy-dispersive X-ray spectroscopy (EDX) is presented as well. Besides that, focused ion beam (FIB) was used to isolate the defective spots by 2 µm wide and 2 µm deep barrier. Isolation pattern around the defect is avoiding leakage current flow through it. Since leakage current does not flow through defect, solar cell parameters in reverse conditions are improved.
Keywords
microstructure defects, silicon, FIB, SEM, SNOM, electroluminiscence, defect isolation, EDX
Authors
GAJDOŠ, A.; ŠKARVADA, P.; MACKŮ, R.; PAPEŽ, N.; ŠKVARENINA, Ľ.; SOBOLA, D.
Released
1. 12. 2018
Publisher
IOP Publishing Ltd
Location
United Kingdom
ISBN
1742-6596
Periodical
Journal of Physics: Conference Series
Year of study
1124
Number
4
State
United Kingdom of Great Britain and Northern Ireland
Pages from
1
Pages to
6
Pages count
URL
http://iopscience.iop.org/article/10.1088/1742-6596/1124/4/041009
BibTex
@article{BUT152661, author="Adam {Gajdoš} and Pavel {Škarvada} and Robert {Macků} and Nikola {Papež} and Ľubomír {Škvarenina} and Dinara {Sobola}", title="Isolation and optoelectronic characterization of Si solar cells microstructure defects", journal="Journal of Physics: Conference Series", year="2018", volume="1124", number="4", pages="1--6", doi="10.1088/1742-6596/1124/4/041009", issn="1742-6596", url="http://iopscience.iop.org/article/10.1088/1742-6596/1124/4/041009" }