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KOKTAVÝ, P., KOKTAVÝ, B.
Original Title
Local Instabilities In GaAsP Diode PN Junctions
Type
conference paper
Language
English
Original Abstract
Currently, the occurrence of microplasma regions in PN junctions is attributed to crystal lattice imperfections. As a rule, these regions feature lower strong-field avalanche ionization breakdown voltages than other homogeneous junction regions. The existence of such regions may lead to local avalanche breakdowns occurring in reverse-biased PN junctions at certain voltages. Macroscopically, these breakdowns are manifested as microplasma noise. Studying the current conductivity bistable mechanism thus may be used as an efficient tool to evaluate the PN junction inhomogeneity.
Keywords
Noise, PN junction, avalanche breakdown, microplasma
Authors
RIV year
2005
Released
1. 1. 2005
Publisher
American Institute of Physics
Location
Salamanca, Spain
ISBN
0-7354-0267-1
Book
Noise and Fluctuations, 18th conference on Noise and Fluctuations - ICNF 05
Pages from
393
Pages to
396
Pages count
4
BibTex
@inproceedings{BUT15272, author="Pavel {Koktavý} and Bohumil {Koktavý}", title="Local Instabilities In GaAsP Diode PN Junctions", booktitle="Noise and Fluctuations, 18th conference on Noise and Fluctuations - ICNF 05", year="2005", pages="4", publisher="American Institute of Physics", address="Salamanca, Spain", isbn="0-7354-0267-1" }